Khatun Sahina, Samanta Siddhartha, Sahoo Satadal, Mukherjee Ishita, Maity Sanhita, Pradhan Anirban
Department of Chemistry, Birla Institute of Technology (BIT)-Mesra, Ranchi, Jharkhand, 835215, India.
Department of Applied Sciences, Amity University, Jharkhand, India.
Chemistry. 2024 Dec 5;30(68):e202403386. doi: 10.1002/chem.202403386. Epub 2024 Nov 18.
Incorporation of regular order pores/holes/defects into semimetalic graphene sheets can tune the band gap up to 1 eV or more introducing semiconducting property and therefore exhibiting promising applications for organic electronics such as field-effect transistors (FETs), molecular sieve membranes, gas sensing, catalysis devices, etc. In this mini review, we focused on bottom-up approaches to introduce periodic homogeneous pores into graphene and nanographene and graphene nanoribbons along with their characteristics and potential applications in various fields.
将规则有序的孔隙/孔洞/缺陷引入半金属性石墨烯片层可将带隙调节至1 eV或更高，从而引入半导体特性，因此在诸如场效应晶体管（FET）、分子筛膜、气体传感、催化装置等有机电子学领域展现出广阔的应用前景。在本综述中，我们重点关注自下而上的方法，即在石墨烯、纳米石墨烯和石墨烯纳米带中引入周期性均匀孔隙，以及它们的特性和在各个领域的潜在应用。
