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用于自旋电子学应用的HfVZ(Z = Ga、In、Tl)反赫斯勒合金的结构、磁电子、机械、热物理、光学和热电性能的系统研究。

Systematic investigation of structural, magneto-electronic, mechanical, thermophysical, optical and thermoelectric properties of HfVZ (Z = Ga, In, Tl) inverse Heusler alloy for spintronics applications.

作者信息

Sharma Shruti, Gupta Dinesh C

机构信息

Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior, India.

出版信息

Sci Rep. 2024 Nov 18;14(1):28542. doi: 10.1038/s41598-024-72305-2.

DOI:10.1038/s41598-024-72305-2
PMID:39557889
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11574311/
Abstract

The structural stability, magneto-electronic, mechanical, thermodynamic, thermoelectric and optical, characteristics of the HfVZ (Z = Ga, In, Tl) Heusler alloy are revealed and understood by a comprehensive investigation employing density functional theory simulations. The stability of these alloys in F-43m phase is confirmed by structural optimizations and cohesive energies, which also provide the equilibrium lattice parameters. Compared to generalized gradient approximations, modified Becke-Johnson methods were more effective in determining the electrical structure and ground state attributes. HfVZ (Z = Ga, In, Tl) is predicted to have half-metallic ferromagnetic characteristics with indirect spin-up gaps based on the band structure analysis and density of state calculations. Stability of these compounds is determined by calculating the elastic constants indicating the ductile nature of these alloys. The quasi-harmonic Debye model is used to predict the effects of temperature and pressure on thermodynamic characteristics, conveying the alloys' thermodynamic stability. To estimate the thermoelectric performance of these materials, we compute electrical conductivities and Seebeck coefficients. The optical parameters like absorption coefficient, optical conductivity, dielectric constants etc., were determined to show the photo-voltaic applications of these alloys. Hence, the finding will lead to future research on developing new types of Hafnium based Heusler alloys for spintronics, thermoelectric and optoelectronics applications.

摘要

通过采用密度泛函理论模拟的全面研究,揭示并理解了HfVZ(Z = Ga、In、Tl)赫斯勒合金的结构稳定性、磁电子、机械、热力学、热电和光学特性。通过结构优化和结合能证实了这些合金在F-43m相中的稳定性,这也提供了平衡晶格参数。与广义梯度近似相比,改进的贝克-约翰逊方法在确定电子结构和基态属性方面更有效。基于能带结构分析和态密度计算,预测HfVZ(Z = Ga、In、Tl)具有半金属铁磁特性,且具有间接的自旋向上能隙。通过计算弹性常数来确定这些化合物的稳定性,这些弹性常数表明了这些合金的延展性。准谐德拜模型用于预测温度和压力对热力学特性的影响,体现了合金的热力学稳定性。为了评估这些材料的热电性能,我们计算了电导率和塞贝克系数。确定了诸如吸收系数、光导率、介电常数等光学参数,以展示这些合金的光伏应用。因此,这一发现将引领未来关于开发新型基于铪的赫斯勒合金用于自旋电子学、热电和光电子学应用的研究。

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