Zhong Donglai, Nishio Yuya, Wu Can, Jiang Yuanwen, Wang Weichen, Yuan Yujia, Yao Yating, Tok Jeffrey B-H, Bao Zhenan
Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
ACS Nano. 2024 Dec 3;18(48):33011-33031. doi: 10.1021/acsnano.4c14026. Epub 2024 Nov 20.
Intrinsically stretchable electronics represent a significant advancement in wearable and implantable technologies, as they offer a unique advantage by maintaining intimate tissue contact while accommodating movements and size changes. This capability makes them exceptionally well-suited for applications in human-machine interfaces, wearables, and implantables, where seamless integration with the human body is essential. To realize this vision, it is important to develop soft integrated circuits for on-body signal processing and computing. Our previous work has focused on developing high-density, intrinsically stretchable transistors capable of delivering high drive current, high-speed performance, and facilitating large-scale integrated circuits. These breakthroughs were achieved through a comprehensive and synergistic approach that encompassed material innovation, meticulous fabrication process design, precise device engineering, and strategic circuit design. Here we provide a comprehensive yet detailed description of these protocols, including design principles, material preparation, fabrication processes, and troubleshooting. These protocols are to empower other researchers to reproduce our developed processes, thus fostering further advancements in stretchable electronics. Specifically, we present in this article an enhanced protocol with explanations, complemented by photographs and instructional videos. This resource aims to bridge the knowledge gap and provide invaluable insights for researchers interested in developing high-performance intrinsically stretchable transistors and integrated circuits. We hope this helps to enable future advancements in the field of intrinsically stretchable electronics.
本征可拉伸电子器件代表了可穿戴和可植入技术的重大进步，因为它们通过在适应运动和尺寸变化的同时保持与组织的紧密接触而具有独特优势。这种能力使其非常适合用于人机接口、可穿戴设备和可植入设备等应用，在这些应用中与人体的无缝集成至关重要。为了实现这一愿景，开发用于身体信号处理和计算的软集成电路非常重要。我们之前的工作重点是开发能够提供高驱动电流、高速性能并有助于大规模集成电路的高密度本征可拉伸晶体管。这些突破是通过一种全面且协同的方法实现的，该方法包括材料创新、精心的制造工艺设计、精确的器件工程和战略电路设计。在这里，我们提供了对这些协议的全面而详细的描述，包括设计原则、材料制备、制造工艺和故障排除。这些协议旨在使其他研究人员能够重现我们开发的过程，从而推动可拉伸电子学的进一步发展。具体而言，我们在本文中展示了一个带有解释的增强协议，并辅以照片和教学视频。该资源旨在弥合知识差距，并为有兴趣开发高性能本征可拉伸晶体管和集成电路的研究人员提供宝贵的见解。我们希望这有助于推动本征可拉伸电子学领域的未来发展。
