Hase Yogesh, Prasad Mohit, Shinde Pratibha, Shah Shruti, Punde Ashvini, Doiphode Vidya, Rahane Swati, Ladhane Somnath, Kale Dhanashri, Waghmare Ashish, Bade Bharat, Patole Shashikant P, Jadkar Sandesh
Opt Express. 2024 Oct 21;32(22):38258-38274. doi: 10.1364/OE.531354.
In this study, high-quality γ-InSe thin films were successfully deposited on p-Si substrates via the RF sputtering technique. Structural characterization using XRD and Raman spectroscopy confirmed the formation of the hexagonal γ-phase of InSe film. FESEM analysis revealed the presence of small, homogeneous, and well-defined grains in the prepared γ-InSe film. EDS analysis confirmed the stoichiometric composition (∼ 2:3) of the InSe films. XPS further validated the presence of In, Se, and Si elements in the deposited films. Band gap analysis using UV-visible spectroscopy yielded a value of 1.96 eV for the γ-InSe film. Integration of γ-InSe with p-type Si enhanced photoresponsivity of 47.9 mA/W, photosensitivity of 282, and photo detectivity of 8.45 × 10 Jones. The self-powered γ-InSe/p-Si heterojunction-based photodetector exhibited rapid rise time attributed to the type II band alignment structure, facilitating efficient electron-hole pair separation and minimizing recombination. Furthermore, humidity and light intensity-dependent photodetector properties of γ-InSe/p-Si heterojunction photodetector were also investigated. An increase in photocurrent from 271 to 291 µA was observed with rising humidity levels, indicating the device's sensitivity to humidity variations. Furthermore, light intensity dependence studies revealed a linear relationship between photocurrent and incident light intensity, demonstrating the device's reliable response across various illumination levels.
在本研究中，通过射频溅射技术成功地在p-Si衬底上沉积了高质量的γ-InSe薄膜。使用X射线衍射（XRD）和拉曼光谱进行的结构表征证实了InSe薄膜六方γ相的形成。场发射扫描电子显微镜（FESEM）分析表明，在制备的γ-InSe薄膜中存在小的、均匀的且定义明确的晶粒。能谱（EDS）分析证实了InSe薄膜的化学计量组成（约为2:3）。X射线光电子能谱（XPS）进一步验证了沉积薄膜中In、Se和Si元素的存在。使用紫外-可见光谱进行的带隙分析得出γ-InSe薄膜的值为1.96 eV。γ-InSe与p型Si的集成增强了47.9 mA/W的光响应性、282的光敏性以及8.45×10琼斯的光探测率。基于自供电γ-InSe/p-Si异质结的光电探测器由于II型能带对准结构而具有快速的上升时间，有利于有效的电子-空穴对分离并使复合最小化。此外，还研究了γ-InSe/p-Si异质结光电探测器的湿度和光强依赖性光电探测器特性。随着湿度水平的升高，观察到光电流从271 μA增加到291 μA，表明该器件对湿度变化敏感。此外，光强依赖性研究揭示了光电流与入射光强之间的线性关系，证明了该器件在各种光照水平下的可靠响应。
