Sahoo Surjit, Ratha Satyajit, Sanyal Gopal, Chakraborty Brahmananda, Nayak Saroj Kumar
Indian Institute of Technology Bhubaneswar, Argul, Jatani, Khordha, Odisha-752050, India.
Department of Mechanical Engineering, Indian Institute of Technology Jammu, Jammu 181221, India.
Phys Chem Chem Phys. 2024 Dec 11;26(48):29962-29975. doi: 10.1039/d4cp03249g.
We report the electrochemical charge storage performance of NiSbO, obtained through a solid-state reaction method, and a detailed comparison with its reduced graphene oxide composite. Intriguingly, the composite, NiSbO-reduced graphene oxide, yielded a large capacitance of 952.38 F g, at a mass-normalized-current of 1 A g, which is at least 4-fold higher than that of the bare NiSbO. We have also tested the performance of the composite in a two-electrode symmetric device. The NiSbO-reduced graphene oxide symmetric device showed an excellent capacity retention of ∼94%, even after 10 000 cycles. We conducted comprehensive density functional theory (DFT) simulations to determine the structure and electronic characteristics of NiSbO, and the composite material of NiSbO-reduced graphene oxide. The incorporation of reduced graphene oxide results in an augmentation of electronic states near the Fermi level, hence showing an improvement in the conductivity of the hybrid system. The composite structure exhibits a lower diffusion energy barrier for electrolyte ions and a greater quantum capacitance than pristine NiSbO. These characteristics confirm our experimental findings and justify the observed improvement in charge storage performance for the composite structure. Based on the results obtained, it can be concluded that the combination of rGO and NiSbO displays excellent performance and has the potential to serve as a highly efficient material for electrochemical capacitors.
我们报道了通过固态反应法获得的NiSbO的电化学电荷存储性能,并与其还原氧化石墨烯复合材料进行了详细比较。有趣的是,NiSbO-还原氧化石墨烯复合材料在1 A g的质量归一化电流下产生了952.38 F g的大电容,这至少是裸NiSbO的4倍。我们还测试了该复合材料在两电极对称器件中的性能。即使在10000次循环后,NiSbO-还原氧化石墨烯对称器件仍显示出约94%的优异容量保持率。我们进行了全面的密度泛函理论(DFT)模拟,以确定NiSbO以及NiSbO-还原氧化石墨烯复合材料的结构和电子特性。还原氧化石墨烯的掺入导致费米能级附近的电子态增加,从而显示出混合体系电导率的提高。该复合结构对电解质离子表现出更低的扩散能垒和比原始NiSbO更大的量子电容。这些特性证实了我们的实验结果,并证明了复合结构在电荷存储性能方面观察到的改善是合理的。基于所获得的结果,可以得出结论,rGO和NiSbO的组合表现出优异的性能,并且有潜力作为电化学电容器的高效材料。