Yezekyan Torgom, Zenin Vladimir A, Thomaschewski Martin, Malureanu Radu, Bozhevolnyi Sergey I
Centre for Nano Optics, University of Southern Denmark, Campusvey 55, 5230, Odense, Denmark.
The George Washington University, 800 22nd St NW, Washington, 20052, Washington, DC, USA.
Nanophotonics. 2023 May 11;12(12):2171-2177. doi: 10.1515/nanoph-2023-0116. eCollection 2023 Jun.
The demand on broadband near-infrared photodetections with high responsivity is becoming increasingly eminent; however its realization remains a significant technological challenge. Here we design, fabricate, and characterize a broadband Ge photodetector (1000-1600 nm), composed of densely packed 230-nm-thick Ge disks of different diameters (255 nm, 320 nm, and 500 nm), placed on top of a 105-nm-thin Ge layer. Using experimentally measured and calculated transmission and absorption spectra, we demonstrate that the absorption and detector responsivity are increased by nearly 2 orders of magnitude, compared to the unstructured Ge photodetector, due to the excitation of magnetic dipole resonances in Ge disks, while preserving a relatively low dark current. Our approach is simple and can be easily adapted to other semiconductor material platforms and operation wavelengths to enable performance improvements of broadband photodetector devices.
对具有高响应度的宽带近红外光电探测的需求日益突出;然而,其实现仍然是一项重大的技术挑战。在此,我们设计、制造并表征了一种宽带锗光电探测器(1000 - 1600纳米),它由不同直径(255纳米、320纳米和500纳米)的紧密排列的230纳米厚的锗盘组成,置于105纳米厚的锗层之上。利用实验测量和计算得到的透射和吸收光谱,我们证明,与非结构化锗光电探测器相比,由于锗盘中磁偶极子共振的激发,吸收和探测器响应度提高了近两个数量级,同时保持了相对较低的暗电流。我们的方法简单,并且可以很容易地应用于其他半导体材料平台和工作波长,以实现宽带光电探测器器件的性能提升。