ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain.
ICREA-Institució Catalana de Recerca i Estudis Avançats, Lluis Companys 23, 08010, Barcelona, Spain.
Adv Mater. 2018 Dec;30(51):e1801164. doi: 10.1002/adma.201801164. Epub 2018 Jul 31.
Conventional semiconductors such as silicon- and indium gallium arsenide (InGaAs)-based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, nontransparency, nonflexibility, and complementary metal-oxide-semiconductor (CMOS) incompatibility. New emerging two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband response from the visible to far-infrared range. Phototransistors based on 2D hybrid systems combined with other material platforms such as quantum dots, perovskites, organic materials, or plasmonic nanostructures yield ultrasensitive and broadband light-detection capabilities. Notably the facile integration of 2D photodetectors on silicon photonics or CMOS platforms paves the way toward high-performance, low-cost, broadband sensing and imaging modalities.
传统的半导体，如基于硅和砷化镓铟（InGaAs）的光电探测器，在光谱覆盖范围、低分辨率、不透明性、不灵活性以及与互补金属氧化物半导体（CMOS）不兼容等方面，已经在现代电子学和光子学方面遇到了瓶颈。然而，新出现的二维（2D）材料，如石墨烯、过渡金属二卤化物（TMDs）及其混合系统，可以克服所有这些问题，得益于其机械灵活性、非凡的电子和光学特性，以及晶圆级生产和集成。基于 2D 材料的异质结光电二极管在可见光到远红外范围内提供超快和宽带响应。基于 2D 混合系统的光电晶体管与其他材料平台（如量子点、钙钛矿、有机材料或等离子体纳米结构）相结合，可实现超高灵敏度和宽带光探测能力。值得注意的是，2D 光电探测器易于集成到硅光子学或 CMOS 平台上，为高性能、低成本、宽带传感和成像模式铺平了道路。
