Yazdanfar Payam, Heydarian Hesam, Rashidian Bizhan
Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran.
Nanophotonics. 2022 Oct 17;11(21):4671-4686. doi: 10.1515/nanoph-2022-0378. eCollection 2022 Dec.
Exploiting localized heat-generation density and the resulting enhanced temperature-rise for controlled growth of carbon nanotubes (CNTs) is reported, and its potentials for batch-production of high-quality CNT probes are demonstrated. Optical near field chemical vapor deposition (ONF-CVD) benchtop fabrication schemes are developed for the localized integration of individual well-aligned carbon nanotubes without bending/buckling exactly at desired nanoscale sites. It is demonstrated that generating self-aligned catalyst nanoparticles superimposed on top of silicon nanotips, along with near-field induced absorption confinement, provide the ability to localize the generated heat at the nanotips apexes, and control the CNT growth locations. The nanoscale maskless controllability of the growth site is shown by properly tailoring ONF-CVD conditions to overcome overall heat exposure of the substrate for selective activation of catalyst nanoparticles located at apexes, from those dispersing all over the tips. The calculated local power densities and temperature profiles of the simulated tips, clearly demonstrate the confined heat and optimal gradient of generated temperature rise as the main factors affecting the growth. In addition to determining necessary processing conditions to control the localization and orientation of the growth, parameters affecting the length and diameter of the localized individually grown nanotubes are also presented. Optical near-field-based growth schemes can be extended for localized maskless fabrication of other nanoscale devices, beyond the diffraction limit, using photothermal effects.
报道了利用局部热生成密度和由此产生的增强升温来控制碳纳米管(CNT)的生长,并展示了其用于批量生产高质量CNT探针的潜力。开发了光学近场化学气相沉积(ONF-CVD)台式制造方案,用于在所需的纳米尺度位置精确地局部集成单个排列良好的碳纳米管,而不会弯曲/屈曲。结果表明,在硅纳米尖端顶部叠加生成自对准催化剂纳米颗粒,以及近场诱导吸收限制,能够将产生的热量定位在纳米尖端顶点,并控制CNT的生长位置。通过适当调整ONF-CVD条件,克服衬底的整体热暴露,以选择性地激活位于顶点的催化剂纳米颗粒,而不是那些分散在整个尖端的催化剂纳米颗粒,从而展示了生长位点的纳米级无掩模可控性。模拟尖端的计算局部功率密度和温度分布清楚地表明,受限热量和产生的升温的最佳梯度是影响生长的主要因素。除了确定控制生长定位和取向的必要加工条件外,还介绍了影响局部单独生长的纳米管长度和直径的参数。基于光学近场的生长方案可以扩展,用于利用光热效应在衍射极限之外进行其他纳米级器件的局部无掩模制造。