Wang Fangwei, Huang Baohu, Liu Yan, Gao Siping, Guo Yongxin, Zhang Qian
National University of Singapore, Singapore, Singapore.
National University of Singapore (Chongqing) Research Institute, Chongqing 401123, China.
Nanophotonics. 2024 Jan 3;13(2):209-216. doi: 10.1515/nanoph-2023-0720. eCollection 2024 Jan.
Plasmonic technology offers one of the most promising solutions to achieve on-chip integration of nanoscale and fast modulation circuits using surface plasmon polaritons (SPPs) as the information carriers. However, the potential of modulation speed of plasmonic signals has not been fully tapped. In this paper, we have demonstrated the plasmonic signal can be modulated at the bandwidth of sub-GHz (>100 MHz) via the on-chip integration of tunnel junctions. We also find that the lifetime of tunnel junctions under AC conditions can be improved significantly compared with the DC counterparts, which allows us to investigate and visualize the real-time breakdown process of tunnel junctions. Our implementation of plasmonic signal modulation at sub-GHz frequency paves the way toward potential industrial applications of on-chip plasmonic circuits.
等离子体技术提供了最有前景的解决方案之一，可利用表面等离激元极化子（SPP）作为信息载体来实现纳米级和快速调制电路的片上集成。然而，等离子体信号调制速度的潜力尚未得到充分挖掘。在本文中，我们证明了通过隧道结的片上集成，等离子体信号能够在亚吉赫兹（>100 MHz）带宽下进行调制。我们还发现，与直流条件下的隧道结相比，交流条件下隧道结的寿命可显著提高，这使我们能够研究并可视化隧道结的实时击穿过程。我们在亚吉赫兹频率下实现的等离子体信号调制为片上等离子体电路的潜在工业应用铺平了道路。
