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用于增强集成1×4硅光子功率分配器的逆设计锥形配置。

Inverse-designed taper configuration for the enhancement of integrated 1 × 4 silicon photonic power splitters.

作者信息

Hong Seokjin, Yoon Jinhyeong, Kim Junhyeong, Neseli Berkay, Kim Jae-Yong, Park Hyo-Hoon, Kurt Hamza

机构信息

The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.

出版信息

Nanophotonics. 2024 Sep 9;13(22):4127-4135. doi: 10.1515/nanoph-2024-0295. eCollection 2024 Sep.

Abstract

Once light is coupled to a photonic chip, its efficient distribution in terms of power splitting throughout silicon photonic circuits is very crucial. We present two types of 1 × 4 power splitters with different splitting ratios of 1:1:1:1 and 2:1:1:2. Various taper configurations were compared and analyzed to find the suitable configuration for the power splitter, and among them, parabolic tapers were chosen. The design parameters of the power splitter were determined by means of solving inverse design problems via incorporating particle swarm optimization that allows for overcoming the limitation of the intuition-based brute-force approach. The front and rear portions of the power splitters were optimized sequentially to alleviate local minima issues. The proposed power splitters have a compact footprint of 12.32 × 5 μm and can be fabricated through a CMOS-compatible fabrication process. Two-stage power splitter trees were measured to enhance reliability in an experiment. As a result, the power splitter with a splitting ratio of 1:1:1:1 exhibited an experimentally measured insertion loss below 0.61 dB and an imbalance below 1.01 dB within the bandwidth of 1,518-1,565 nm. Also, the power splitter with a splitting ratio of 2:1:1:2 showed an insertion loss below 0.52 dB and a targeted imbalance below 1.15 dB within the bandwidth of 1,526-1,570 nm. Such inverse-designed power splitters can be an essential part of many large-scale photonic circuits including optical phased arrays, programmable photonics, and photonic computing chips.

摘要

一旦光耦合到光子芯片上,其在整个硅光子电路中的功率分配效率就非常关键。我们展示了两种不同分光比为1:1:1:1和2:1:1:2的1×4功率分配器。比较并分析了各种锥形配置,以找到适合功率分配器的配置,其中选择了抛物线形锥形。通过结合粒子群优化来解决逆设计问题,从而确定功率分配器的设计参数,这克服了基于直觉的蛮力方法的局限性。对功率分配器的前部和后部依次进行优化,以缓解局部最小值问题。所提出的功率分配器具有12.32×5μm的紧凑尺寸,并且可以通过CMOS兼容的制造工艺进行制造。在实验中测量了两级功率分配器树以提高可靠性。结果,分光比为1:1:1:1的功率分配器在1518 - 1565nm带宽内实验测量的插入损耗低于0.61dB,不平衡度低于1.01dB。此外,分光比为2:1:1:2的功率分配器在1526 - 1570nm带宽内显示出插入损耗低于0.52dB,目标不平衡度低于1.15dB。这种经过逆设计的功率分配器可以成为许多大规模光子电路的重要组成部分,包括光学相控阵、可编程光子学和光子计算芯片。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1590/11501067/58dda5613c13/j_nanoph-2024-0295_fig_001.jpg

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