Demirer Figen Ece, Baron Yngwie, Reniers Sander, Pustakhod Dzmitry, Lavrijsen Reinoud, van der Tol Jos, Koopmans Bert
Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands.
Department of Electrical Engineering, Eindhoven University of Technology, Eindhoven, The Netherlands.
Nanophotonics. 2022 Jun 15;11(14):3319-3329. doi: 10.1515/nanoph-2022-0165. eCollection 2022 Jul.
This study presents the design, fabrication and experimental demonstration of a magneto-photonic device that delivers non-volatile photonic memory functionality. The aim is to overcome the energy and speed bottleneck of back-and-forth signal conversion between the electronic and optical domains when retrieving information from non-volatile memory. The device combines integrated photonic components based on the InP membrane on silicon (IMOS) platform and a non-volatile, built-in memory element (ferromagnetic thin-film multilayers) realized as a top-cladding on the photonic waveguides (a post-processing step). We present a design where the phase of the guided light is engineered via two mechanisms: the polar magneto-optical Kerr effect (MOKE) and the propagation in an asymmetrical cross-section (triangular) waveguide. Thanks to its design, the device yields different mode-specific transmissions depending on the memory state it encodes. We demonstrate the recording of the magnetic hysteresis using the transmitted optical signal, providing direct proof for all optical magnetic memory reading using an integrated photonic chip. Using mathematical model and optical simulations, we support the experimental observations and quantitatively reproduce the Kerr signal amplitudes on-chip. A 1% transmitted power contrast from devices is promising indicating that in a shot noise limited scenario the theoretical bandwidth of memory read-out exceeds 50 Gbits/s.
本研究展示了一种实现非易失性光子存储功能的磁光光子器件的设计、制造及实验演示。其目的是克服从非易失性存储器检索信息时，电子域和光域之间来回信号转换的能量和速度瓶颈。该器件将基于硅上磷化铟（IMOS）平台的集成光子组件与一个非易失性内置存储元件（铁磁薄膜多层结构）相结合，该存储元件通过后处理步骤实现为光子波导上的顶部包层。我们提出了一种设计，其中通过两种机制来调控导波光的相位：偏振磁光克尔效应（MOKE）以及在非对称横截面（三角形）波导中的传播。由于其设计，该器件根据其编码的存储状态产生不同的模式特定传输。我们展示了利用传输光信号记录磁滞回线，为使用集成光子芯片进行全光磁存储读取提供了直接证据。通过数学模型和光学模拟，我们支持实验观察结果并在芯片上定量再现克尔信号幅度。器件1%的传输功率对比度很有前景，表明在散粒噪声受限的情况下，存储器读出的理论带宽超过50 Gbit/s。
