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铁磁掺杂镍的MnN薄膜中电流驱动的畴壁动力学:非常大的畴壁速度以及跨越磁补偿点时运动方向的反转

Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped MnN Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point.

作者信息

Ghosh Sambit, Komori Taro, Hallal Ali, Peña Garcia Jose, Gushi Toshiki, Hirose Taku, Mitarai Haruka, Okuno Hanako, Vogel Jan, Chshiev Mairbek, Attané Jean-Philippe, Vila Laurent, Suemasu Takashi, Pizzini Stefania

机构信息

Université Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-Spintec, 38054 Grenoble, France.

Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan.

出版信息

Nano Lett. 2021 Mar 24;21(6):2580-2587. doi: 10.1021/acs.nanolett.1c00125. Epub 2021 Mar 11.

DOI:10.1021/acs.nanolett.1c00125
PMID:33705154
Abstract

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT-driven DW motion in ferrimagnetic manganese nickel nitride (MnNiN) films, in which magnetization and angular momentum compensation can be obtained by the fine adjustment of the Ni content. Large domain wall velocities, approaching 3000 m/s, are measured for Ni compositions close to the angular momentum compensation point. The reversal of the DW motion direction, observed when the compensation composition is crossed, is related to the change of direction of the angular momentum with respect to that of the spin polarization. This is confirmed by the results of band structure calculations.

摘要

自旋转移力矩(STT)和自旋轨道力矩(SOT)是自旋电子学现象,可利用电流实现磁化操控。除了其基本的研究价值外,它们还能推动新型磁存储器和逻辑器件的发展,特别是基于畴壁(DW)运动的器件。在这项工作中,我们报告了对亚铁磁性锰镍氮化物(MnNiN)薄膜中STT驱动的DW运动的研究,其中通过精细调节镍含量可实现磁化和角动量补偿。对于接近角动量补偿点的镍成分,测得的畴壁速度高达近3000米/秒。当越过补偿成分时观察到的DW运动方向反转,与角动量方向相对于自旋极化方向的变化有关。能带结构计算结果证实了这一点。

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