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具有锗量子阱的金属-半导体微腔中的强耦合：一项前瞻性研究。

Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study.

作者信息

Faverzani Marco, Calcaterra Stefano, Biagioni Paolo, Frigerio Jacopo

机构信息

Politecnico di Milano, Milano, Italy.

出版信息

Nanophotonics. 2024 Jan 24;13(10):1693-1700. doi: 10.1515/nanoph-2023-0730. eCollection 2024 Apr.

DOI:10.1515/nanoph-2023-0730
PMID:39635615
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11501236/
Abstract

In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.

摘要

在这项工作中，我们从理论上研究了在IV族半导体材料平台内观察中红外频率下强耦合的可能性。我们的结果表明，在集成于混合金属-半导体微腔中的Ge/SiGe量子阱中可以实现强耦合条件，该微腔以高度n型掺杂的SiGe层作为其中一个反射镜。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/6f9cc3e33096/j_nanoph-2023-0730_fig_006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/8475d3008493/j_nanoph-2023-0730_fig_001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/06067840a6a5/j_nanoph-2023-0730_fig_002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/a0f68f8e410c/j_nanoph-2023-0730_fig_003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/8de4aa4a180e/j_nanoph-2023-0730_fig_004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/1b5483875746/j_nanoph-2023-0730_fig_005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/6f9cc3e33096/j_nanoph-2023-0730_fig_006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/8475d3008493/j_nanoph-2023-0730_fig_001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/06067840a6a5/j_nanoph-2023-0730_fig_002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/a0f68f8e410c/j_nanoph-2023-0730_fig_003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/8de4aa4a180e/j_nanoph-2023-0730_fig_004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/1b5483875746/j_nanoph-2023-0730_fig_005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c5ed/11501236/6f9cc3e33096/j_nanoph-2023-0730_fig_006.jpg

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本文引用的文献

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Fast amplitude modulation up to 1.5 GHz of mid-IR free-space beams at room-temperature.室温下中红外自由空间光束高达1.5吉赫兹的快速幅度调制。
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Terahertz absorption-saturation and emission from electron-doped germanium quantum wells.电子掺杂锗量子阱的太赫兹吸收-饱和及发射
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