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用于各向同性二维半导体界面对称性破缺的高度各向异性二维绝缘体CrOCl纳米片的合成

Synthesis of Highly Anisotropic 2D Insulator CrOCl Nanosheets for Interfacial Symmetry Breaking in Isotropic 2D Semiconductors.

作者信息

Tang Yue, Ping Yue, Yang Xiaoxin, Xing Jiabao, Chen Jiabiao, Wang Xiao, Lu Jiangbo, Jing Hongmei, Liu Kaiqiang, Wu Jinxiong, Zhou Xing, Zhai Tianyou, Xu Hua

机构信息

Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China.

Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China.

出版信息

Adv Mater. 2025 Feb;37(5):e2405358. doi: 10.1002/adma.202405358. Epub 2024 Dec 10.

Abstract

Chromium oxychloride (CrOCl), a van der Waals antiferromagnetic insulator, has attracted significant interest in 2D optoelectronic, ferromagnetic, and quantum devices. However, the bottom-up preparation of 2D CrOCl remains challenging, limiting its property exploration and device application. Herein, the controllable synthesis of 2D CrOCl crystals by chemical vapor deposition is demonstrated. The combination reaction of precursors together with the space-confined growth strategy, providing stable and stoichiometric growth conditions, enable a robust synthesis of high-crystallinity CrOCl nanosheets with regular rhombus-like morphology and uniform thickness. By tuning the growth temperature from 675 to 800 °C, the thickness of CrOCl nanosheets can be continuously modulated from 10.2 to 30.8 nm, with the domain size increasing from 16.9 to 25.5 µm. The as-grown CrOCl nanosheets exhibit significant structural/optical anisotropy, ultrahigh insulativity, and superior air stability. Furthermore, a MoS/CrOCl heterostructure with single-mirror symmetry stacking and ultrastrong interfacial coupling is built to realize interfacial symmetry breaking, a novel interface phenomenon that converts MoS from isotropy to anisotropy. Consequently, the MoS/CrOCl heterostructure device achieves polarization-sensitive photodetection and bulk photovoltaic effect, which are nonexistent in high-symmetry 2D materials. This work paves the way for the future exploration of CrOCl-based 2D physics and devices via symmetry engineering.

摘要

三氯氧化铬(CrOCl)作为一种范德华反铁磁绝缘体,在二维光电器件、铁磁器件和量子器件领域引起了广泛关注。然而,二维CrOCl的自下而上制备仍然具有挑战性,限制了其性能探索和器件应用。在此,展示了通过化学气相沉积法可控合成二维CrOCl晶体。前驱体的组合反应与空间受限生长策略相结合,提供了稳定且化学计量比的生长条件,能够稳健地合成具有规则菱形形态和均匀厚度的高结晶度CrOCl纳米片。通过将生长温度从675℃调至800℃,CrOCl纳米片的厚度可从10.2nm连续调节至30.8nm,畴尺寸从16.9μm增加到25.5μm。生长得到的CrOCl纳米片表现出显著的结构/光学各向异性、超高绝缘性和优异的空气稳定性。此外,构建了具有单镜对称堆叠和超强界面耦合的MoS/CrOCl异质结构,以实现界面对称性破缺,这是一种将MoS从各向同性转变为各向异性的新型界面现象。因此,MoS/CrOCl异质结构器件实现了偏振敏感光探测和体光伏效应,这在高对称性二维材料中是不存在的。这项工作为未来通过对称性工程探索基于CrOCl的二维物理和器件铺平了道路。

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