Delikoukos Nikos, Katsiaounis Stavros, Parthenios John, Sygellou Labrini, Tasis Dimitrios, Papagelis Konstantinos
Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece.
Department of Physics, University of Patras, Patras 26504, Greece.
ACS Omega. 2024 Nov 22;9(49):48246-48255. doi: 10.1021/acsomega.4c05697. eCollection 2024 Dec 10.
In this work, we present a comprehensive protocol for achieving hole doping in graphene through exposure to nitric acid (HNO) vapors. We demonstrate gradual p-type surface doping of CVD-grown graphene on a Si/SiO substrate by thermally depositing nitric acid molecules to form self-assembled charge transfer complexes. Detailed analysis of charge carrier concentration and Fermi energy shifts was conducted using Raman, X-ray and ultraviolet photoelectron spectroscopies (XPS/UPS). Our methodology, including a novel PMMA coating step, ensures stability and efficiency of the doping process, highlighting its effectiveness in inducing permanent hole doping while maintaining the structural integrity of the graphene.
在这项工作中，我们提出了一种通过暴露于硝酸（HNO）蒸气来实现石墨烯空穴掺杂的综合方案。我们通过热沉积硝酸分子以形成自组装电荷转移复合物，证明了在Si/SiO衬底上化学气相沉积（CVD）生长的石墨烯的逐步p型表面掺杂。使用拉曼光谱、X射线和紫外光电子能谱（XPS/UPS）对电荷载流子浓度和费米能位移进行了详细分析。我们的方法，包括一个新颖的聚甲基丙烯酸甲酯（PMMA）涂层步骤，确保了掺杂过程的稳定性和效率，突出了其在诱导永久性空穴掺杂同时保持石墨烯结构完整性方面的有效性。
