Beams Ryan, Gustavo Cançado Luiz, Novotny Lukas
Institute of Optics, University of Rochester, Rochester, NY 14627, USA.
J Phys Condens Matter. 2015 Mar 4;27(8):083002. doi: 10.1088/0953-8984/27/8/083002. Epub 2015 Jan 30.
In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the carrier concentration in graphene thereby enabling the engineering of novel material systems. Accurately measuring both the defect density and doping is critical and Raman spectroscopy provides a powerful tool to accomplish this task.
在本文中，我们回顾了关于石墨烯中缺陷和掺杂剂的拉曼研究，以及两者对于器件应用的重要性。首先，简要介绍了石墨烯的拉曼光谱。在接下来的部分中，我们讨论了三种缺陷类型的拉曼表征：点缺陷、边缘和晶界。下一部分回顾了拉曼光谱对掺杂剂的依赖性，并重点介绍了几种常见的掺杂技术。在最后一部分，讨论了利用石墨烯中的掺杂和缺陷的几种器件应用。一般来说，缺陷会降低器件的品质因数，如载流子迁移率和电导率，而掺杂提供了一种调节石墨烯中载流子浓度的方法，从而能够设计新型材料系统。准确测量缺陷密度和掺杂至关重要，拉曼光谱提供了一个强大的工具来完成这项任务。
