Shtrom Igor V, Sibirev Nickolai V, Soshnikov Ilya P, Ilkiv Igor V, Ubyivovk Evgenii V, Reznik Rodion R, Cirlin George E
Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia.
Department of Nanotechnology Methods and Instruments, Institute for Analytical Instrumentation of Russian Academy of Sciences, 198095 St. Petersburg, Russia.
Nanomaterials (Basel). 2024 Nov 21;14(23):1860. doi: 10.3390/nano14231860.
This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor-solid-liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst droplet. Arsenic exhibits limited solubility in conventional catalysts; however, this research explores an alternative scenario in which lead serves as a solvent for arsenic, while gallium and lead are immiscible liquids. Liquid lead easily dissolves in Si as well as in GaAs. The preservation of the catalyst during the growth process is also addressed. GaAs nanowires have been grown by molecular beam epitaxy on silicon Si (111) substrates at varying temperatures. Observations indicate the spontaneous doping of the GaAs nanowires with both lead and silicon. These findings contribute to a deeper understanding of the VLS mechanism involved in nanowire growth. They are also an important step in the study of GaAs nanowire-doping processes.
本研究利用铅作为催化剂来探究砷化镓纳米线的生长。通常，纳米线通过气-固-液机制生长，其中一个关键因素是催化剂液滴下方成核势垒的降低。砷在传统催化剂中的溶解度有限；然而，本研究探索了一种替代情况，即铅作为砷的溶剂，而镓和铅是不互溶的液体。液态铅很容易溶解在硅以及砷化镓中。还讨论了生长过程中催化剂的保存问题。已通过分子束外延在不同温度的硅Si(111)衬底上生长了砷化镓纳米线。观察结果表明，砷化镓纳米线会自发地被铅和硅掺杂。这些发现有助于更深入地理解纳米线生长所涉及的气-液-固机制。它们也是砷化镓纳米线掺杂过程研究中的重要一步。
