Xu Zitong, Lv Qihang, Li Xuyang, Meng You, Ho Johnny C, Guo Pengfei
College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China.
Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China.
ACS Appl Mater Interfaces. 2025 Jan 8;17(1):1962-1970. doi: 10.1021/acsami.4c17135. Epub 2024 Dec 17.
Composition-adjustable semiconductor nanomaterials have garnered significant attention due to their controllable bandgaps and electronic structures, providing alternative opportunities to regulate photoelectric properties and develop the corresponding multifunction optoelectronic devices. Nevertheless, the large-scale integration of semiconductor nanomaterials into practical devices remains challenging. Here, we report a synthesis strategy for the well-aligned horizontal CdSSe ( = 0-1) nanowall arrays, which are guided grown on an annealed M-plane sapphire using chemical vapor deposition (CVD) approaches. Microstructural characterizations demonstrate these structures as horizontally guided nanowalls with high-quality crystallinity. Microphotoluminescence (μ-PL) reveals the CdSSe nanowalls exhibiting continuously tunable spontaneous emissions from 509 nm (pure CdS) to 713 nm (pure CdSe), further confirming that CdSSe alloys have a continuously tunable bandgap. Notably, a photodetector based on CdSSe nanowalls displays excellent photoelectric performance, such as high responsivity (3 × 10 ∼ 1 × 10 A/W), high external quantum efficiency (1.01 × 10 ∼ 2.93 × 10), and fast response speed in the millisecond magnitude. Furthermore, the CdS nanowall-based photodetectors exhibit a remarkable image-sensing capability, indicating potential applications in high-performance image sensing in the future. Bandgap continuously tunable nanowall arrays with high-quality crystallinity inject great vitality into the manufacturing of high-performance integrated optoelectronic devices.
成分可调的半导体纳米材料因其可控的带隙和电子结构而备受关注，为调节光电性能和开发相应的多功能光电器件提供了新的机遇。然而，将半导体纳米材料大规模集成到实际器件中仍然具有挑战性。在此，我们报道了一种合成策略，用于制备排列整齐的水平CdSSe（x = 0 - 1）纳米壁阵列，该阵列通过化学气相沉积（CVD）方法在退火的M面蓝宝石上定向生长。微观结构表征表明这些结构为具有高质量结晶度的水平定向纳米壁。微光致发光（μ-PL）显示CdSSe纳米壁呈现出从509 nm（纯CdS）到713 nm（纯CdSe）的连续可调自发发射，进一步证实CdSSe合金具有连续可调的带隙。值得注意的是，基于CdSSe纳米壁的光电探测器表现出优异的光电性能，如高响应度（3×10⁵ ∼ 1×10⁶ A/W）、高外量子效率（1.01×10⁵ ∼ 2.93×10⁵）以及毫秒级的快速响应速度。此外，基于CdS纳米壁的光电探测器还表现出显著的图像传感能力，表明其在未来高性能图像传感方面具有潜在应用。具有高质量结晶度且带隙连续可调的纳米壁阵列为高性能集成光电器件的制造注入了强大活力。
