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PbS 量子点/2D 非层状 CdSSe 纳米片杂化纳米结构用于高性能宽带光电探测器。

PbS Quantum Dots/2D Nonlayered CdS Se Nanosheet Hybrid Nanostructure for High-Performance Broadband Photodetectors.

机构信息

Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China.

College of Material Science & Engineering , Jiangsu University of Science and Technology , Zhenjiang , Jiangsu 212003 , P. R. China.

出版信息

ACS Appl Mater Interfaces. 2018 Dec 19;10(50):43887-43895. doi: 10.1021/acsami.8b15406. Epub 2018 Dec 5.

Abstract

Two-dimensional (2D) nonlayered nanomaterials have attracted extensive attention for electronic and optoelectronic applications recently because of their distinct properties. In this work, we first employed a facile one-step method to synthesize 2D nonlayered cadmium sulfide selenide (CdS Se, x = 0.33) nanosheets with a highly crystalline structure and then we introduced a generic spin-coating approach to fabricate hybrid nanomaterials composed of PbS quantum dots (QDs) and 2D CdS Se nanosheets and demonstrated their potential for high-performance broadband photodetectors. Compared with pure 2D CdS Se nanosheet photodetectors, the photoelectric performance of the PbS/CdS Se hybrid nanostructure is enhanced by 3 orders of magnitude under near-infrared (NIR) light illumination and maintains its performance in the visible (Vis) range. The photodetector exhibits a broadband response range from Vis to NIR with an ultrahigh light-to-dark current ratio (3.45 × 10), a high spectral responsivity (1.45 × 10 A/W), and high detectivity (1.05 × 10 Jones). The proposed QDs/2D nonlayered hybrid nanostructure-based photodetector paves a promising way for next-generation high-performance broadband optoelectronic devices.

摘要

二维(2D)无层状纳米材料因其独特的性质,最近在电子和光电子应用中引起了广泛关注。在这项工作中,我们首先采用简便的一步法合成了具有高结晶结构的 2D 无层状硫化镉硒(CdSSe,x = 0.33)纳米片,然后采用通用的旋涂方法制备了由 PbS 量子点(QDs)和 2D CdSSe 纳米片组成的混合纳米材料,并展示了它们在高性能宽带光电探测器中的应用潜力。与纯 2D CdSSe 纳米片光电探测器相比,在近红外(NIR)光照射下,PbS/CdSSe 混合纳米结构的光电性能提高了 3 个数量级,在可见光(Vis)范围内保持其性能。该光电探测器具有从 Vis 到 NIR 的宽带响应范围,具有超高的光暗电流比(3.45×10)、高光响应率(1.45×10 A/W)和高探测率(1.05×10 琼斯)。基于 QDs/2D 无层状混合纳米结构的光电探测器为下一代高性能宽带光电器件铺平了道路。

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