Saglik Kivanc, Tan Xian Yi, Dong Jinfeng, Suwardi Ady, Wang Xizu, Xu Jianwei, Zhu Qiang, Liu Hongfei, Cao Jing, Yan Qingyu
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Block N4.1, 639798, Singapore.
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, 138634, Singapore.
Phys Chem Chem Phys. 2025 Jan 15;27(3):1437-1446. doi: 10.1039/d4cp04219k.
SbSiTe is a promising 2D material for medium-temperature thermoelectric applications, with the thermoelectric figure of merit approaching 1 at 823 K. However, its widespread use has been limited by relatively low power factor values. In this study, we successfully enhanced the performance of SbSiTe by introducing Yttrium nanocomposites. This modification fine-tuned the carrier concentration and electrical conductivity, and increased the power factor up to 946 μW K at 570 K. Jonker plot analysis revealed that increased carrier concentration did not affect the intrinsic electronic properties. SEM and TEM analyses revealed that Y nano-compositing introduced secondary phases, reducing the lattice thermal conductivity to values close to simulated ones using the Debye-Callaway model. SbYSiTe exhibited the highest of 1.49 at 773 K due to the ultralow lattice thermal conductivity of 0.29 W m K and a moderate power factor of 858 μW K at the same temperature. The single parabolic band (SPB) model suggests that with further optimization of the Fermi level and additional reduction in lattice thermal conductivity, the value could potentially increase to 1.55. These results demonstrate the potential of Y nanocompositing for enhancing SbSiTe as an efficient medium-temperature thermoelectric material.
