Sun Zhaohong, Perez Carlos Mora, Prezhdo Oleg V, Brutchey Richard L
Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States.
ACS Nanosci Au. 2024 Oct 11;4(6):381-390. doi: 10.1021/acsnanoscienceau.4c00022. eCollection 2024 Dec 18.
Wide band gap AInSe (A = K, Rb, Cs) is an important interlayer material for improving the efficiency of Cu(In,Ga)(S,Se) (CIGS) solar cells. Compared to high-vacuum deposition and solid-state synthesis, a less energy-intensive method is of interest for its fabrication. Herein, we present the rapid, low-temperature colloidal synthesis of AInSe nanocrystals that opens a pathway for convenient solution processing. The crystal structures and electronic band structures of the nanocrystals were studied, and their particle morphology was found to be dependent on the choice of alkali metal and selenium precursors. Homogeneous solid solution (K,Rb,Cs)InSe nanocrystals were synthesized using a mixture of alkali metal precursors. Their compositions, lattice parameters, and band gaps were easily tuned based on the K:Rb:Cs precursor ratio, providing potential for interface engineering of CIGS nanocrystal-based solar cells.
宽带隙AInSe（A = K、Rb、Cs）是一种用于提高铜铟镓硒（CIGS）太阳能电池效率的重要层间材料。与高真空沉积和固态合成相比，一种能耗较低的方法因其制备过程而备受关注。在此，我们展示了AInSe纳米晶体的快速低温胶体合成方法，这为便捷的溶液处理开辟了一条途径。研究了纳米晶体的晶体结构和电子能带结构，发现其颗粒形态取决于碱金属和硒前驱体的选择。使用碱金属前驱体的混合物合成了均匀的固溶体（K、Rb、Cs）InSe纳米晶体。基于K:Rb:Cs前驱体比例，它们的组成、晶格参数和带隙很容易调节，为基于CIGS纳米晶体的太阳能电池的界面工程提供了潜力。
