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激光辐照对脉冲直流磁控溅射沉积的ZrN薄膜的影响

The Impact of Laser Irradiation on Thin ZrN Films Deposited by Pulsed DC Magnetron Sputtering.

作者信息

Nazneen Ameena, Lei Penghui, Yun Di

机构信息

School of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China.

出版信息

Nanomaterials (Basel). 2024 Dec 13;14(24):1999. doi: 10.3390/nano14241999.

DOI:10.3390/nano14241999
PMID:39728535
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11728533/
Abstract

Transition metal nitrides have extensive applications, including magnetic storage devices, hardware resistance coatings, and low-temperature fuel cells. This study investigated the structural, electrical, and mechanical properties of thin zirconium nitride (ZrN) films by examining the effects of laser irradiation times. Thin ZrN films were deposited on glass substrates using pulsed DC magnetron sputtering and irradiated with a diode laser for 6 and 10 min. Characterization was performed using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), nanoindentation, and four-point probe techniques. Extended laser irradiation times resulted in increased numbers of peaks on XRD analysis, indicating enhanced crystalline behavior of thin ZrN film. SEM analysis revealed surface voids, while HRTEM showed nanostructured ZrN with uniform plane orientation. The electrical properties of the thin ZrN film improved with extended laser irradiation, as demonstrated by a reduction in sheet resistance from 0.43 × 10 Ω to 0.04 × 10 Ω. Additionally, nanoindentation tests revealed an increase in hardness, rising from 8.91 GPa to 9.36 GPa.

摘要

过渡金属氮化物有广泛的应用,包括磁存储设备、硬件电阻涂层和低温燃料电池。本研究通过考察激光辐照时间的影响,研究了氮化锆(ZrN)薄膜的结构、电学和力学性能。采用脉冲直流磁控溅射在玻璃衬底上沉积ZrN薄膜,并使用二极管激光器分别辐照6分钟和10分钟。使用X射线衍射(XRD)、扫描电子显微镜(SEM)、高分辨率透射电子显微镜(HRTEM)、纳米压痕和四点探针技术进行表征。延长激光辐照时间导致XRD分析中的峰数增加,表明ZrN薄膜的结晶行为增强。SEM分析揭示了表面孔隙,而HRTEM显示出具有均匀平面取向的纳米结构ZrN。ZrN薄膜的电学性能随着激光辐照时间的延长而改善,薄膜电阻从0.43×10Ω降低到0.04×10Ω即可证明。此外,纳米压痕测试显示硬度增加,从8.91 GPa上升到9.36 GPa。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/4f8fff853f3a/nanomaterials-14-01999-g014.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/5cebfb912971/nanomaterials-14-01999-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/7b11a104592a/nanomaterials-14-01999-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/b506831c5e4c/nanomaterials-14-01999-g011.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/4f8fff853f3a/nanomaterials-14-01999-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/899587c26491/nanomaterials-14-01999-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/ac58fe416fd1/nanomaterials-14-01999-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/74b186f8104d/nanomaterials-14-01999-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/6d4a431b1145/nanomaterials-14-01999-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/2cb57232f3c8/nanomaterials-14-01999-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/04ce730cab9e/nanomaterials-14-01999-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/f79815e8ee17/nanomaterials-14-01999-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/5cebfb912971/nanomaterials-14-01999-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/7b11a104592a/nanomaterials-14-01999-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/b506831c5e4c/nanomaterials-14-01999-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/b15a3a3158d7/nanomaterials-14-01999-g012.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6b35/11728533/4f8fff853f3a/nanomaterials-14-01999-g014.jpg

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AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.具有再生长欧姆接触的半绝缘氨化镓衬底上的氮化铝镓/氮化镓高电子迁移率晶体管
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