Wojtasiak Wojciech, Góralczyk Marcin, Gryglewski Daniel, Zając Marcin, Kucharski Robert, Prystawko Paweł, Piotrowska Anna, Ekielski Marek, Kamińska Eliana, Taube Andrzej, Wzorek Marek
Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland.
Ammono Lab, Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland.
Micromachines (Basel). 2018 Oct 25;9(11):546. doi: 10.3390/mi9110546.
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3⁻0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.
对基于半绝缘块状氨热法生长的GaN上的AlGaN/GaN高电子迁移率晶体管进行了研究。通过应用再生长欧姆接触，解决了获得与低位错高电子迁移率晶体管（HEMT）结构的低电阻欧姆接触的问题。最大输出电流约为1 A/mm，接触电阻在0.3⁻0.6 Ω·mm范围内。由于不存在诸如高接入电阻等寄生元件，因此获得了良好的微波性能。
