Xie Ziang, Chen Sen, Zhang Shiping, Pei Yili, Li Li, Wu Ping
Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Basic Experimental Center for Natural Science, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Small. 2025 Aug;21(32):e2410022. doi: 10.1002/smll.202410022. Epub 2024 Dec 30.
The study presents a multi-functional and semiconductor polymer poly[bis(3-hexylthiophen-2-yl)thieno[3,4-c]pyrrole-4,6-dione] (PBDTTPD) doping strategy that significantly enhanced the performance of the two-terminal all-perovskite tandem perovskite solar cells (T-PSCs). An optimized power conversion efficiency (PCE) of 26.87% has been achieved. The incorporation of PBDTTPD into the wide bandgap (WBG) perovskite layer evidently improved its crystallinity and enhanced the top-cell's PCE to 18.49%. After 2880 h dark storage in nitrogen, the TPSC retained 87.4% of initial PCE, which demonstrates the device's stability. On flexible polyethylene-naphthalate (PEN) substrate, the TPSC achieved an enhanced champion PCE of 22.96%, and significantly advanced anti-bending ability. The TPSC's enhanced performance is ascribed to the strong coordinate-bonding between the S/N/O passivation sites in PBDTTPD, and the Pb defects in the WBG perovskite layer's grain boundaries. Optoelectronic simulations demonstrated a 23%-24% theoretical PCE limit for the WBG single-junction PSCs with ≈1.8 eV bandgap. To boost the PCE of next-generation TPSCs, it is crucial to further mitigate both the bulk and the surface recombination.
该研究提出了一种多功能半导体聚合物聚双(3-己基噻吩-2-基)噻吩并[3,4-c]吡咯-4,6-二酮掺杂策略，该策略显著提高了两端全钙钛矿串联钙钛矿太阳能电池(T-PSC)的性能。实现了26.87%的优化功率转换效率(PCE)。将PBDTTPD掺入宽带隙(WBG)钙钛矿层明显改善了其结晶度，并将顶电池的PCE提高到18.49%。在氮气中黑暗储存2880小时后，TPSC保留了初始PCE的87.4%，这证明了该器件的稳定性。在柔性聚萘二甲酸乙二醇酯(PEN)基板上，TPSC实现了22.96%的增强冠军PCE，并具有显著提高的抗弯曲能力。TPSC性能的提高归因于PBDTTPD中S/N/O钝化位点与WBG钙钛矿层晶界处的Pb缺陷之间的强配位键。光电模拟表明，带隙约为1.8 eV的WBG单结PSC的理论PCE极限为23%-24%。为了提高下一代TPSC的PCE，进一步减轻体相和表面复合至关重要。
