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用于高效钙钛矿/CuInGaSe串联光伏电池的倒置宽带隙钙钛矿太阳能电池中的阿苯达唑钝化

Albendazole Passivation in Inverted Wide-Bandgap Perovskite Solar Cells toward Efficient Perovskite/CuInGaSe Tandem Photovoltaics.

作者信息

Luo Zekai, Tang Liting, Zeng Li, Fang Hongyi, Wang Wuji, Zhang Hangrui, Zhu Jingyi, Li Wenbo, Wang Ti, Wang Sheng, Wang Xiaomin, Xiao Xudong, Li Jianmin

机构信息

Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.

Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China.

出版信息

Adv Mater. 2025 Jul 25:e05597. doi: 10.1002/adma.202505597.

DOI:10.1002/adma.202505597
PMID:40709888
Abstract

Self-assembled materials (SAMs) like [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz) are commonly used as hole transport layers (HTLs) in inverted wide-bandgap (WBG) perovskite solar cells. However, the poor wettability of perovskite precursor solutions on Me-4PACz and its polarity-induced aggregation hinder high-quality film formation. To address these challenges, albendazole (ALB) is introduced as a surface modifier for Me-4PACz. The ALB solution mitigates the aggregation of Me-4PACz and promotes the desorption and rearrangement process of weakly bound Me-4PACz molecules. Concurrently, its Lewis basic moiety improves film quality, reduces buried interfacial defects, and optimizes energy level alignment. Additionally, ALB forms directional π-π interactions with Me-4PACz, ultimately suppressing non-radiative recombination and facilitating charge carrier transport. As a result, ALB-optimized inverted WBG perovskite solar cells achieve a power conversion efficiency (PCE) of 22.68%, with unencapsulated devices retaining 93.87% of their initial efficiency after 736 h of continuous maximum power point tracking (MPPT) under illumination. Furthermore, integrating the ALB-modified semi-transparent perovskite top cell with a 1.03 eV bandgap CuInGaSe (CIGS) bottom cell yields a four-terminal tandem device with an impressive total efficiency of 29.06%. This dual-objective strategy provides a simple and effective method for simultaneously improving the film quality of both the HTL and the perovskite layer.

摘要

像[4-(3,6-二甲基-9H-咔唑-9-基)丁基]膦酸(Me-4PACz)这样的自组装材料通常用作倒置宽带隙(WBG)钙钛矿太阳能电池的空穴传输层(HTL)。然而,钙钛矿前驱体溶液在Me-4PACz上的润湿性差及其极性诱导的聚集阻碍了高质量薄膜的形成。为了应对这些挑战,引入阿苯达唑(ALB)作为Me-4PACz的表面改性剂。ALB溶液减轻了Me-4PACz的聚集,并促进了弱结合的Me-4PACz分子的解吸和重排过程。同时,其路易斯碱性部分提高了薄膜质量,减少了掩埋界面缺陷,并优化了能级排列。此外,ALB与Me-4PACz形成定向π-π相互作用,最终抑制非辐射复合并促进电荷载流子传输。结果,经ALB优化的倒置WBG钙钛矿太阳能电池实现了22.68%的功率转换效率(PCE),未封装的器件在光照下连续最大功率点跟踪(MPPT)736小时后仍保持其初始效率的93.87%。此外,将ALB改性的半透明钙钛矿顶电池与带隙为1.03 eV的铜铟镓硒(CIGS)底电池集成,得到了一个四端串联器件,其总效率高达29.06%,令人印象深刻。这种双目标策略为同时提高HTL和钙钛矿层的薄膜质量提供了一种简单有效的方法。

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