发现具有强磁电耦合的层状多铁性化合物CuMnSiTe。
Discovery of a layered multiferroic compound CuMnSiTe with strong magnetoelectric coupling.
作者信息
De Chandan, Liu Yu, Ayyagari Sai Venkata Gayathri, Zheng Boyang, Kelley Kyle P, Hazra Sankalpa, He Jingyang, Pawledzio Sylwia, Mali Subin, Guchhait Samaresh, Yoshida Suguru, Guan Yingdong, Lee Seng Huat, Sretenovic Milos, Ke Xianglin, Wang Le, Engelhard Mark H, Du Yingge, Xie Weiwei, Wang Xiaoping, Crespi Vincent H, Alem Nasim, Gopalan Venkatraman, Zhang Qiang, Mao Zhiqiang
机构信息
2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA.
Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA.
出版信息
Sci Adv. 2025 Jan 3;11(1):eadp9379. doi: 10.1126/sciadv.adp9379. Epub 2025 Jan 1.
Multiferroic materials host both ferroelectricity and magnetism, offering potential for magnetic memory and spin transistor applications. Here, we report a multiferroic chalcogenide semiconductor CuMnSiTe (0.04 ≤ ≤ 0.26; 0.03 ≤ ≤ 0.15), which crystallizes in a polar monoclinic structure ( space group). It exhibits a canted antiferromagnetic state below 35 kelvin, with magnetic hysteresis and remanent magnetization under 15 kelvin. We demonstrate multiferroicity and strong magnetoelectric coupling through magnetodielectric and magnetocurrent measurements. At 10 kelvin, the magnetically induced electric polarization reaches ~0.8 microcoulombs per square centimeter, comparable to the highest value in oxide multiferroics. We also observe possible room-temperature ferroelectricity. Given that multiferroicity is very rare among transition metal chalcogenides, our finding sets up a unique materials platform for designing multiferroic chalcogenides.
多铁性材料兼具铁电性和磁性，为磁存储器和自旋晶体管应用提供了潜力。在此，我们报道了一种多铁性硫族化物半导体CuMnSiTe（0.04≤≤0.26；0.03≤≤0.15），它结晶为极性单斜结构（空间群）。它在35开尔文以下呈现倾斜反铁磁态，在15开尔文以下具有磁滞和剩余磁化。我们通过磁电介质和磁电流测量证明了多铁性和强磁电耦合。在10开尔文时，磁诱导电极化达到约每平方厘米0.8微库仑，与氧化物多铁性材料中的最高值相当。我们还观察到可能的室温铁电性。鉴于多铁性在过渡金属硫族化物中非常罕见，我们的发现为设计多铁性硫族化物建立了一个独特的材料平台。
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