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用于高性能橙红色/深红色有机发光二极管的硫锁定多共振发射体。

Sulfur-locked multiple resonance emitters for high performance orange-red/deep-red OLEDs.

作者信息

Pu Yexuan, Jin Qian, Zhang Yuewei, Li Chenglong, Duan Lian, Wang Yue

机构信息

State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China.

Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China.

出版信息

Nat Commun. 2025 Jan 2;16(1):332. doi: 10.1038/s41467-024-55680-2.

Abstract

Multiple resonance thermally activated delayed fluorescence (MR-TADF) materials are preferred for their high efficiency and high colour purity in organic light-emitting diodes (OLEDs). However, the design strategies of MR-TADF emitters in the red region are very limited. Herein, we propose a concept for a paradigm shift in orange-red/deep-red MR emitters by linking the outer phenyl groups in a classical MR framework through intramolecular sulfur (S) locks. Endowed with the planar architectural feature of the MR mother core, the proof-of-concept S-embedded emitters S-BN and 2S-BN also exhibit considerable flatness, which proves critical in avoiding the direct establishment of potent charge transfer states and inhibiting the non-radiative decay process. The emission maxima of S-BN and 2S-BN are 594 nm and 671 nm, respectively, and both have a high photoluminescence quantum yield of ~100%, a rapid radiative decay rate of around 10 s, and a remarkably high reverse intersystem crossing rates of about 10 s. Notably, maximum external quantum efficiencies of 39.9% (S-BN, orange-red) and 29.3% (2S-BN, deep-red) were also achieved in typical planar OLED structures with ameliorated efficiency roll-offs.

摘要

多重共振热激活延迟荧光(MR-TADF)材料因其在有机发光二极管(OLED)中具有高效率和高色纯度而受到青睐。然而,红色区域的MR-TADF发光体的设计策略非常有限。在此,我们提出了一种概念,通过分子内硫(S)锁连接经典MR框架中的外部苯基,实现橙红色/深红色MR发光体的范式转变。具有MR母核平面结构特征的概念验证型嵌入S的发光体S-BN和2S-BN也表现出相当的平面度,这对于避免直接形成有效的电荷转移态和抑制非辐射衰减过程至关重要。S-BN和2S-BN的发射最大值分别为594 nm和671 nm,两者都具有约100%的高光致发光量子产率、约10 s的快速辐射衰减率和约10 s的显著高反向系间窜越率。值得注意的是,在具有改善的效率滚降的典型平面OLED结构中,还分别实现了39.9%(S-BN,橙红色)和29.3%(2S-BN,深红色)的最大外部量子效率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0ecb/11696159/a412ddb3bddc/41467_2024_55680_Fig1_HTML.jpg

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