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通过高压扭转进行严重塑性变形加工的陶瓷中的位错密度

Dislocation Density in Ceramics Processed by Severe Plastic Deformation via High-Pressure Torsion.

作者信息

Edalati Kaveh, Enikeev Nariman

机构信息

WPI International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395, Japan.

Laboratory of Metals and Alloys Under Extreme Impacts, Ufa University of Science and Technology, 32 Zaki Validi str., Ufa 450076, Russia.

出版信息

Materials (Basel). 2024 Dec 18;17(24):6189. doi: 10.3390/ma17246189.

Abstract

This study investigates the dislocation density in ceramics processed by severe plastic deformation at room and elevated temperatures via high-pressure torsion (HPT) for various numbers of turns and shear strains. Ceramics, characterized by ionic or covalent bonding, typically exhibit brittleness due to limited dislocation activity. However, HPT enables significant microstructural transformations in ceramics including dislocation nucleation and accumulation. Despite recent advances in the visualization of such dislocations by transmission electron microscopy (TEM), there is a lack of comprehensive reports on the quantification of dislocation density in severely deformed ceramics. This paper addresses this gap by employing X-ray diffraction (XRD) analysis to quantify dislocation density and crystallite size in a few oxide ceramics. Results demonstrate that HPT induces exceptionally high dislocation densities comparable to theoretical upper limits of dislocation density in ceramics, on the order of 10 to 10 m, with crystallite sizes reduced to the nanometer scale. These findings significantly enhance the understanding of dislocation behavior in ceramics and suggest a potential approach for tuning the mechanical and functional properties of these materials by dislocations.

摘要

本研究通过高压扭转(HPT)在室温和高温下对陶瓷进行不同圈数和剪切应变的剧烈塑性变形,研究其位错密度。以离子键或共价键为特征的陶瓷,由于位错活动有限,通常表现出脆性。然而,高压扭转能使陶瓷发生显著的微观结构转变,包括位错形核和积累。尽管最近通过透射电子显微镜(TEM)在可视化此类位错方面取得了进展,但对于严重变形陶瓷中位错密度的量化,仍缺乏全面的报道。本文通过采用X射线衍射(XRD)分析来量化几种氧化物陶瓷中的位错密度和微晶尺寸,填补了这一空白。结果表明,高压扭转会诱导出极高的位错密度,与陶瓷中位错密度的理论上限相当,约为10¹⁰至10¹² m⁻²,同时微晶尺寸减小到纳米尺度。这些发现显著增进了对陶瓷中位错行为的理解,并提出了一种通过位错来调节这些材料的力学和功能特性的潜在方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/efab/11679498/eafb667b0122/materials-17-06189-g001.jpg

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