Oh Changyong, Ju Myeong Woo, Jeong Hojun, Song Jun Ho, Kim Bo Sung, Lee Dae Gyu, Cho ChoongHo
DRAM Process Architecture Team, Samsung Electronics, Hwaseong-si 18448, Gyeonggi-do, Republic of Korea.
Department of Applied Physics, Korea University, Sejong 30019, Republic of Korea.
Materials (Basel). 2024 Dec 20;17(24):6241. doi: 10.3390/ma17246241.
Inductively coupled plasma-reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according to radiofrequency bias power, gas mixing ratio, and chamber pressure. The IGZO film showed an excellent etch rate of 83.2 nm/min from an optimized etching condition such as a plasma power of 100 W, process pressure of 3 mTorr, and HCl ratio of 75% (HCl:Ar at 30 sccm:10 sccm). In addition, this ICP-RIE etching condition with a high HCl composition ratio at a moderate RIE power of 100 W showed a low etched pattern skew and low photoresist damage on the IGZO patterns. It also provided excellent surface morphology of the SiO film underneath after the entire dry etching of the IGZO layer. The IGZO thin film as an active layer was successfully patterned under the ICP-RIE dry etching under the HCl-Ar gas mixture, affording an excellent electrical characteristic in the resultant top-gate IGZO thin-film transistor.
研究了在盐酸（HCl）和氩气（Ar）混合气体变化的情况下，对铟镓锌氧化物（IGZO）薄膜进行电感耦合等离子体反应蚀刻（ICP-RIE）的情况。根据射频偏置功率、气体混合比和腔室压力，研究了IGZO薄膜的干法蚀刻特性。在诸如100 W的等离子体功率、3 mTorr的工艺压力和75%的HCl比例（HCl:Ar为30 sccm:10 sccm）等优化蚀刻条件下，IGZO薄膜显示出83.2 nm/min的优异蚀刻速率。此外，在100 W的中等RIE功率下具有高HCl组成比的这种ICP-RIE蚀刻条件，在IGZO图案上显示出低蚀刻图案偏差和低光刻胶损伤。在对IGZO层进行整个干法蚀刻之后，它还在下方的SiO薄膜上提供了优异的表面形态。作为有源层的IGZO薄膜在HCl-Ar气体混合物的ICP-RIE干法蚀刻下成功构图，在所得的顶栅IGZO薄膜晶体管中提供了优异的电学特性。
