Kim Taegi, Kim Hee-Dong
Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.
Micromachines (Basel). 2024 Nov 23;15(12):1411. doi: 10.3390/mi15121411.
We present a SnO gas sensor with an HfO layer that exhibits enhanced performance and reliability for gasistor applications, combining a gas sensor and a memristor. The transparent SnO gasistor with a 30 nm HfO layer demonstrated low forming voltages (7.1 V) and a high response rate of 81.28% to 50 ppm of NO gas, representing an approximately 174.86% increase compared to the response of 29.58% from the SnO gas sensor without the HfO layer. The device also showed improved power efficiency and exceptional long-term stability, with reproducibility tests over 10 days at 10 ppm NO showing a minimal variation of 2.4%. These results indicate that the proposed transparent memristor with the 30 nm HfO layer significantly enhances the device's reliability and effectiveness for gasistor applications.
我们展示了一种带有HfO层的SnO气体传感器，该传感器结合了气体传感器和忆阻器，在气体istor应用中表现出增强的性能和可靠性。具有30 nm HfO层的透明SnO气体istor表现出低形成电压（7.1 V），对50 ppm NO气体的高响应率为81.28%，与没有HfO层的SnO气体传感器29.58%的响应相比，增加了约174.86%。该器件还显示出提高的功率效率和出色的长期稳定性，在10 ppm NO下进行的10天重复性测试显示最小变化为2.4%。这些结果表明，所提出的具有30 nm HfO层的透明忆阻器显著提高了该器件在气体istor应用中的可靠性和有效性。
