增强基于HfO的透明忆阻器器件的电阻开关特性以用于可靠的气敏电阻器应用。

Enhancing the Resistive Switching Properties of Transparent HfO-Based Memristor Devices for Reliable Gasistor Applications.

作者信息

Kim Taegi, Lee Doowon, Chae Myoungsu, Kim Kyeong-Heon, Kim Hee-Dong

机构信息

Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.

Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan 31080, Republic of Korea.

出版信息

Sensors (Basel). 2024 Oct 1;24(19):6382. doi: 10.3390/s24196382.

DOI:10.3390/s24196382

PMID:39409422

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11479299/

Abstract

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 10 s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device's reliability for gasistor applications.

摘要

我们展示了一种具有粗糙表面（RS）底部电极（BE）的透明忆阻器，其性能和可靠性得到增强，可用于气敏忆阻器（一种气体传感器加忆阻器）及其在本文中的应用。具有RS BE的透明忆阻器表现出低形成电压（0.8 V）和稳定的电阻开关行为，具有高耐久性和约125的开/关比。这种改进归因于在将RS BE应用于透明忆阻器时对电场分布和氧空位浓度的更好控制。在环境空气环境中长时间保持导电细丝的稳定性对于忆阻器作为气敏忆阻器的应用至关重要。具有RS BE的忆阻器展示了维持稳定电流状态约10 s的能力。结果表明，所提出的具有RS BE的透明忆阻器可以显著提高器件在气敏忆阻器应用中的可靠性。