Choo Hyun Seon, Youn Da-Hyeon, Choi Hyunggyu, Kim Gi Yeol, Kim Soo Youn
Department of System Semiconductor, Dongguk University, Seoul 04620, Republic of Korea.
Sensors (Basel). 2024 Dec 19;24(24):8131. doi: 10.3390/s24248131.
In this study, we describe a low-noise complementary metal-oxide semiconductor (CMOS) image sensor (CIS) with a 10/11-bit hybrid single-slope analog-to-digital converter (SS-ADC). The proposed hybrid SS-ADC provides a resolution of 11 bits in low-light and 10 bits in high-light. To this end, in the low-light section, the digital-correlated double sampling method using a double data rate structure was used to obtain a noise performance similar to that of the 11-bit SS-ADC under low-light conditions, while maintaining linear in-out characteristics. The CIS with the proposed 10/11-bit hybrid SS-ADC was fabricated using a 110 nm 1-poly 4-metal CIS process. The measurement results showed that dark random noise was reduced by 8% in low light when using the proposed hybrid SS-ADC, compared with the existing 10-bit ADC. Additionally, in the case of high brightness, when using a 10-bit resolution, the dynamic power consumption decreased by approximately 31%, compared to the 11-bit ADC. The total power consumption is 3.9 mW at 15 fps when the analog, pixel, and digital supply voltages are 3.3 V, 3.3 V, and 1.5 V, respectively.
在本研究中,我们描述了一种带有10/11位混合单斜率模数转换器(SS-ADC)的低噪声互补金属氧化物半导体(CMOS)图像传感器(CIS)。所提出的混合SS-ADC在低光照下提供11位分辨率,在高光照下提供10位分辨率。为此,在低光照部分,采用使用双倍数据速率结构的数字相关双采样方法,以在低光照条件下获得与11位SS-ADC相似的噪声性能,同时保持线性的输入输出特性。采用110 nm 1-多晶硅4-金属CIS工艺制造了具有所提出的10/11位混合SS-ADC的CIS。测量结果表明,与现有的10位ADC相比,使用所提出的混合SS-ADC时,低光照下的暗随机噪声降低了8%。此外,在高亮度情况下,当使用10位分辨率时,与11位ADC相比,动态功耗降低了约31%。当模拟、像素和数字电源电压分别为3.3 V、3.3 V和1.5 V时,在15帧/秒的情况下总功耗为3.9 mW。