一种用于智能监控系统的具有新型两步单斜率模数转换器的多分辨率模式互补金属氧化物半导体图像传感器。

A Multi-Resolution Mode CMOS Image Sensor with a Novel Two-Step Single-Slope ADC for Intelligent Surveillance Systems.

作者信息

Kim Daehyeok, Song Minkyu, Choe Byeongseong, Kim Soo Youn

机构信息

Department of Semiconductor Science, Dongguk University-Seoul, Seoul 04620, Korea.

Department of Information and Telecommunication Engineering, Dongguk University-Seoul, Seoul 04620, Korea.

出版信息

Sensors (Basel). 2017 Jun 25;17(7):1497. doi: 10.3390/s17071497.

DOI:10.3390/s17071497

PMID:28672832

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5539649/

Abstract

In this paper, we present a multi-resolution mode CMOS image sensor (CIS) for intelligent surveillance system (ISS) applications. A low column fixed-pattern noise (CFPN) comparator is proposed in 8-bit two-step single-slope analog-to-digital converter (TSSS ADC) for the CIS that supports normal, 1/2, 1/4, 1/8, 1/16, 1/32, and 1/64 mode of pixel resolution. We show that the scaled-resolution images enable CIS to reduce total power consumption while images hold steady without events. A prototype sensor of 176 × 144 pixels has been fabricated with a 0.18 μm 1-poly 4-metal CMOS process. The area of 4-shared 4T-active pixel sensor (APS) is 4.4 μm × 4.4 μm and the total chip size is 2.35 mm × 2.35 mm. The maximum power consumption is 10 mW (with full resolution) with supply voltages of 3.3 V (analog) and 1.8 V (digital) and 14 frame/s of frame rates.

摘要

在本文中，我们展示了一种用于智能监控系统（ISS）应用的多分辨率模式互补金属氧化物半导体图像传感器（CIS）。针对支持正常、1/2、1/4、1/8、1/16、1/32和1/64像素分辨率模式的CIS，在8位两步单斜率模数转换器（TSSS ADC）中提出了一种低列固定模式噪声（CFPN）比较器。我们表明，在无事件时图像保持稳定的情况下，缩放分辨率图像可使CIS降低总功耗。采用0.18μm 1-多晶硅4-金属互补金属氧化物半导体工艺制造了一个176×144像素的原型传感器。4共享4T有源像素传感器（APS）的面积为4.4μm×4.4μm，芯片总面积为2.35mm×2.35mm。在3.3V（模拟）和1.8V（数字）的电源电压以及14帧/秒的帧率下，最大功耗为10mW（全分辨率）。