Miao Lei, Xue Yibei, Song Peng, Hasegawa Takuya, Okawa Ayahisa, Maezono Ryo, Sekino Tohru, Yin Shu
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan.
School of Information Science, JAIST, Asahidai 1-1, Nomi, Ishikawa 923-1292, Japan.
ACS Sens. 2025 Jan 24;10(1):526-536. doi: 10.1021/acssensors.4c03006. Epub 2025 Jan 9.
The anomalous gas sensing behavior has garnered significant attention from researchers, prompting a re-evaluation of the gas sensing theory. This work focuses on inversion gas sensing behavior induced by element doping. W/Mo/Cr-doped VO(M1) samples are synthesized, and their sensing behaviors are investigated. The results show that the elements can modulate the sensing behavior with an opposite orientation. The sensing behavior in the opposite orientation is attributed to the extent of the reduced Fermi level of VO(M1) after doping. W-doped VO(M1) maintains a resistance-decreased sensing behavior (-n). In contrast, the decrease in Fermi level results in the formation of a Schottky barrier between the gas-absorbed Mo/Cr-doped VO(M1) and the electrode. The formation of Schottky barriers leads to the inversion sensing behavior, which feedbacks as an increased resistance (-p). This study offers a novel perspective on the gas sensing theory.
这种异常的气敏行为引起了研究人员的极大关注，促使人们对气敏理论进行重新评估。这项工作聚焦于元素掺杂诱导的反向气敏行为。合成了W/Mo/Cr掺杂的VO(M1)样品，并对其气敏行为进行了研究。结果表明，这些元素能够以相反的方向调节气敏行为。这种相反方向的气敏行为归因于掺杂后VO(M1)费米能级降低的程度。W掺杂的VO(M1)保持电阻降低的气敏行为（-n）。相比之下，费米能级的降低导致在气体吸附的Mo/Cr掺杂的VO(M1)与电极之间形成肖特基势垒。肖特基势垒的形成导致反向气敏行为，表现为电阻增加（-p）。这项研究为气敏理论提供了一个新的视角。
