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用于透明导体的多层石墨烯与银纳米线网络堆叠结构

Multilayer Graphene Stacked with Silver Nanowire Networks for Transparent Conductor.

作者信息

Kwak Jinsung

机构信息

Department of Physics, Changwon National University, Changwon 51140, Republic of Korea.

Department of Materials Convergence and System Engineering, Changwon National University, Changwon 51140, Republic of Korea.

出版信息

Materials (Basel). 2025 Jan 6;18(1):208. doi: 10.3390/ma18010208.

DOI:10.3390/ma18010208
PMID:39795853
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11721972/
Abstract

A mechanically robust flexible transparent conductor with high thermal and chemical stability was fabricated from welded silver nanowire networks (w-Ag-NWs) sandwiched between multilayer graphene (MLG) and polyimide (PI) films. By modifying the gas flow dynamics and surface chemistry of the Cu surface during graphene growth, a highly crystalline and uniform MLG film was obtained on the Cu foil, which was then directly coated on the Ag-NW networks to serve as a barrier material. It was found that the highly crystalline layers in the MLG film compensate for structural defects, thus forming a perfect barrier film to shield Ag NWs from oxidation and sulfurization. MLG/w-Ag-NW composites were then embedded into the surface of a transparent and colorless PI thin film by spin-coating. This allowed the MLG/w-Ag-NW/PI composite to retain its original structural integrity due to the intrinsic physical and chemical properties of PI, which also served effectively as a binder. In view of its unique sandwich structure and the chemical welding of the Ag NWs, the flexible substrate-cum-electrode had an average sheet resistance of ≈34 Ω/sq and a transmittance of ≈91% in the visible range, and also showed excellent stability against high-temperature annealing and sulfurization.

摘要

一种具有高机械强度、高热稳定性和化学稳定性的柔性透明导体,是由夹在多层石墨烯(MLG)和聚酰亚胺(PI)薄膜之间的焊接银纳米线网络(w-Ag-NWs)制成的。通过在石墨烯生长过程中改变铜表面的气流动力学和表面化学性质,在铜箔上获得了高度结晶且均匀的MLG薄膜,然后将其直接涂覆在银纳米线网络上作为阻隔材料。研究发现,MLG薄膜中的高度结晶层弥补了结构缺陷,从而形成了完美的阻隔膜,以保护银纳米线免受氧化和硫化。然后通过旋涂将MLG/w-Ag-NW复合材料嵌入透明无色PI薄膜的表面。由于PI的固有物理和化学性质,这使得MLG/w-Ag-NW/PI复合材料能够保持其原始结构完整性,PI也有效地起到了粘合剂的作用。鉴于其独特的三明治结构和银纳米线的化学焊接,这种柔性基底兼电极在可见光范围内的平均方阻约为34Ω/sq,透过率约为91%,并且在高温退火和硫化处理下也表现出优异的稳定性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/5d97acbedf8b/materials-18-00208-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/fd8ee4d4f02e/materials-18-00208-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/f2030052530d/materials-18-00208-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/cace485f4f0f/materials-18-00208-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/5d97acbedf8b/materials-18-00208-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/fd8ee4d4f02e/materials-18-00208-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/f2030052530d/materials-18-00208-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/cace485f4f0f/materials-18-00208-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a71e/11721972/5d97acbedf8b/materials-18-00208-g004.jpg

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