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利用快速热退火对银纳米线进行纳米焊接以制备透明导电薄膜。

Nano-Welding of Ag Nanowires Using Rapid Thermal Annealing for Transparent Conductive Films.

作者信息

Oh Jong Sik, Oh Ji Soo, Shin Jae Hee, Yeom Geun Young, Kim Kyong Nam

出版信息

J Nanosci Nanotechnol. 2015 Nov;15(11):8647-51. doi: 10.1166/jnn.2015.11509.

Abstract

Ag nanowire (NW) films obtained by the spraying the Ag NWs on the substrates were nano-welded by rapid thermal annealing (RTA) process and the effect of RTA process on the change of sheet resistance and optical transmittance of the Ag NW films was investigated. The increased number of Ag NW sprays on the substrate decreased the sheet resistance but also decreased the optical transmittance. By the annealing for 60 sec in a nitrogen environment to 225-250 degrees C, the sheet resistance of Ag NW film could be decreased to about 50%, even though it was accompanied by the slight decrease of optical transmittance less than 5%. The decrease of sheet resistance was related to the nano-welding of the Ag NW junctions and the slight decrease of optical transmittance was related local melting of the Ag NWs and spreading on the substrate surface. Through the nano-welding by RTA process, the Ag NW film with the sheet resistance of -20 Ω/sq. and the optical transmittance of 93% could be obtained.

摘要

通过将银纳米线喷涂在基板上获得的银纳米线(NW)薄膜,采用快速热退火(RTA)工艺进行纳米焊接,并研究了RTA工艺对银纳米线薄膜表面电阻和光学透过率变化的影响。在基板上增加银纳米线的喷涂次数会降低表面电阻,但也会降低光学透过率。在氮气环境中于225 - 250摄氏度下退火60秒,银纳米线薄膜的表面电阻可降低至约50%,尽管同时光学透过率略有下降,降幅小于5%。表面电阻的降低与银纳米线结的纳米焊接有关,而光学透过率的轻微下降与银纳米线的局部熔化并在基板表面扩散有关。通过RTA工艺的纳米焊接,可以获得表面电阻为-20Ω/sq且光学透过率为93%的银纳米线薄膜。

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