Li Shiyi, Feng Hengzhen, Lou Wenzhong, Zhao Yuecen, Lv Sining, Kan Wenxing
School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China.
Chongqing Innovation Center, Beijing Institute of Technology, Chongqing 401120, China.
Sensors (Basel). 2025 Jan 2;25(1):221. doi: 10.3390/s25010221.
With the demand for high-safety, high-integration, and lightweight micro- and nano-electronic components, an MEMS electromagnetic energy-releasing component was innovatively designed based on the corona discharge theory. The device subverted the traditional device-level protection method for electromagnetic energy, realizing the innovation of adding a complex circuit system to the integrated chip through micro-nanometer processing technology and enhancing the chip's size from the centimeter level to the micron level. In this paper, the working performance of the MEMS electromagnetic energy-releasing component was verified through a combination of a simulation, a static experiment, and a dynamic test, and a characterization test of the tested MEMS electromagnetic energy-releasing component was carried out to thoroughly analyze the effect of the MEMS electromagnetic energy-releasing component. The results showed that after the strong electromagnetic pulse injection, the pulse breakdown voltage of the MEMS electromagnetic energy-releasing component increased exponentially in terms of the pulse injection voltage, and the residual pulse current decreased significantly from one-third to one-half of the original, representing a significant protective effect. In a DC environment, the breakdown voltage of the needle-needle structure of the MEMS electromagnetic energy-releasing component was 144 V, and the on-time was about 0.5 ms.
随着对高安全性、高集成度和轻量化的微纳电子元件的需求，基于电晕放电理论创新性地设计了一种MEMS电磁能量释放元件。该器件颠覆了传统的电磁能量器件级保护方法，通过微纳加工技术实现了在集成芯片中添加复杂电路系统的创新，并将芯片尺寸从厘米级提升到了微米级。本文通过模拟、静态实验和动态测试相结合的方式对MEMS电磁能量释放元件的工作性能进行了验证，并对测试的MEMS电磁能量释放元件进行了表征测试，以全面分析MEMS电磁能量释放元件的效果。结果表明，在强电磁脉冲注入后，MEMS电磁能量释放元件的脉冲击穿电压随脉冲注入电压呈指数增长，残余脉冲电流从原来的三分之一显著下降到二分之一，具有显著的保护效果。在直流环境下，MEMS电磁能量释放元件针针结构的击穿电压为144 V，导通时间约为0.5 ms。
