Zheng Dongxing, Xu Jingkai, Wang Qingxiao, Liu Chen, Yang Tao, Chen Aitian, Li Yan, Tang Meng, Chen Maolin, Algaidi Hanin, Jin Chao, Liu Kai, Kläui Mathias, Schwingenschlögl Udo, Zhang Xixiang
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Corelab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Nano Lett. 2025 Jan 29;25(4):1528-1535. doi: 10.1021/acs.nanolett.4c05502. Epub 2025 Jan 13.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering. We fabricate LaSrMnO-SrIrO (LSIMO) thin films with robust spin-orbit coupling and ferromagnetic order through orbital and lattice reconstruction, integrating SrIrO and LaSrMnO materials. Our investigation reveals that - and -polarized spin currents, driven by the spin Hall and spin-orbit precession effects, enable field-free switching of perpendicular magnetization. Notably, the -polarized spin currents are tunable via the in-plane magnetization of LSIMO. These findings present a promising pathway for the development of energy-efficient spintronic devices, offering improved performance and scalability.
利用自旋轨道转矩实现垂直磁化的无场切换对于开发先进的磁存储器和逻辑器件至关重要。然而,现有方法通常涉及复杂的设计或混合方法,这使得制造过程复杂化,并影响器件的稳定性和可扩展性。在此,我们提出一种新颖的方法,通过界面工程利用极化自旋电流实现垂直磁化的确定性切换。我们通过轨道和晶格重构,将SrIrO和LaSrMnO材料集成在一起,制备出具有强自旋轨道耦合和铁磁序的LaSrMnO-SrIrO(LSIMO)薄膜。我们的研究表明,由自旋霍尔效应和自旋轨道进动效应驱动的极化和极化自旋电流能够实现垂直磁化的无场切换。值得注意的是,极化自旋电流可通过LSIMO的面内磁化进行调节。这些发现为开发节能型自旋电子器件提供了一条有前景的途径,有望提升器件性能和可扩展性。