Huo Yiqi, Li Shuo, Yan Luo, Li Ningbo, Zou Jing, He Junjie, Zhou Tong, Frauenheim Thomas, Tretiak Sergei, Zhou Liujiang
School of Physics, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China.
Institute for Advanced Study, Chengdu University, Chengdu 610106, China.
J Phys Chem Lett. 2025 Jan 23;16(3):782-788. doi: 10.1021/acs.jpclett.4c03279. Epub 2025 Jan 13.
Ultrashort laser pulses are extensively used for efficient manipulation of interfacial spin injection in two-dimensional van der Waals (vdW) heterostructures. However, physical processes accompanying the photoinduced spin transfer dynamics on the all-semiconductor ferromagnetic vdW heterostructure remain largely unexplored. Here, we present a computational investigation of the femtosecond laser pulse induced purely electron-mediated spin transfer dynamics at a time scale of less than 50 fs in a vdW heterostructure. The latter is composed of two semiconducting monolayers, namely, a ferromagnetic material CrSBr and a nonmagnetic phosphorene, and is denoted as CrSBr-P. We observe an ultrafast spin injection from the Cr atoms to the P atoms in a few femtoseconds by both optically induced and interfacial atom-mediated spin transfer effects. We also show that the demagnetization and spin transfer in the ferromagnetic-nonmagnetic CrSBr-P vdW heterostructure can be sensitively manipulated by laser pulses with different fluences. Our study offers a microscopic understanding of spin dynamics in these vdW heterostructures aiming toward their potential spintronic applications, which rely on optically controlled spin transfer processes.
超短激光脉冲被广泛用于高效操控二维范德华（vdW）异质结构中的界面自旋注入。然而，全半导体铁磁vdW异质结构上光诱导自旋转移动力学所伴随的物理过程在很大程度上仍未得到探索。在此，我们展示了对一种vdW异质结构中飞秒激光脉冲在小于50飞秒的时间尺度上诱导的纯电子介导自旋转移动力学的计算研究。该异质结构由两个半导体单层组成，即铁磁材料CrSBr和非磁性的磷烯，记为CrSBr-P。通过光诱导和界面原子介导的自旋转移效应，我们观察到在几飞秒内从Cr原子到P原子的超快自旋注入。我们还表明，具有不同能量密度的激光脉冲可以灵敏地操控铁磁-非磁性CrSBr-P vdW异质结构中的退磁和自旋转移。我们的研究为这些vdW异质结构中的自旋动力学提供了微观理解，旨在推动其潜在的自旋电子学应用，这些应用依赖于光控自旋转移过程。
