Jangir Arun, Ho Duc Tam, Schwingenschlögl Udo
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Department of Mechanical and Construction Engineering, Northumbria University, Newcastle Upon Tyne NE1 8ST, United Kingdom.
J Phys Chem Lett. 2025 Jan 23;16(3):811-817. doi: 10.1021/acs.jpclett.4c03464. Epub 2025 Jan 15.
Materials exhibiting both metallic and semiconducting states, including two-dimensional transition metal dichalcogenides (TMDs), have numerous applications. We therefore investigate the effects of axial and shear strains on the phase energetics of pristine and striped TMDs using density functional theory and classical molecular dynamics simulations. We demonstrate that control of the phase distribution can be achieved by the integration of strain engineering and Kirigami techniques. Our results extend the understanding of the phase energetics in TMDs and reveal an effective strategy for creating virtually defect-free metal-semiconductor-metal junctions.
包括二维过渡金属二硫属化物(TMDs)在内的兼具金属态和半导体态的材料有众多应用。因此,我们使用密度泛函理论和经典分子动力学模拟来研究轴向应变和剪切应变对原始和条纹状TMDs相能量学的影响。我们证明,通过应变工程和剪纸技术的结合可以实现对相分布的控制。我们的结果扩展了对TMDs相能量学的理解,并揭示了一种创建几乎无缺陷的金属-半导体-金属结的有效策略。