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电子束作用下二维过渡金属二硫属化物MoS的结构转变:第一性原理计算的见解

Structural Transformations in Two-Dimensional Transition-Metal Dichalcogenide MoS under an Electron Beam: Insights from First-Principles Calculations.

作者信息

Kretschmer Silvan, Komsa Hannu-Pekka, Bøggild Peter, Krasheninnikov Arkady V

机构信息

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf , 01314 Dresden, Germany.

Department of Applied Physics, Aalto University School of Science , PO Box 11100, 00076 Aalto, Finland.

出版信息

J Phys Chem Lett. 2017 Jul 6;8(13):3061-3067. doi: 10.1021/acs.jpclett.7b01177. Epub 2017 Jun 21.

DOI:10.1021/acs.jpclett.7b01177
PMID:28617607
Abstract

The polymorphism of two-dimensional (2D) transition-metal dichalcogenides (TMDs) and different electronic properties of the polymorphs make TMDs particularly promising materials in the context of applications in electronics. Recently, local transformations from the semiconducting trigonal prismatic H phase to the metallic octahedral T phase in 2D MoS have been induced by electron irradiation [ Nat. Nanotech. 2014 , 9 , 391 ], but the mechanism of the transformations remains elusive. Using density functional theory calculations, we study the energetics of the stable and metastable phases of 2D MoS when additional charge, mechanical strain, and vacancies are present. We also investigate the role of finite temperatures, which appear to be critical for the transformations. On the basis of the results of our calculations, we propose an explanation for the beam-induced transformations, which are likely promoted by charge redistribution in the monolayer due to electronic excitations combined with formation of vacancies under electron beam and buildup of the associated mechanical strain in the sample. As this mechanism should be relevant to other 2D TMDs, our results provide hints for further development and optimization of electron-beam-mediated engineering of the atomic structure and electronic properties of 2D TMDs with subnanometer resolution.

摘要

二维(2D)过渡金属二硫属化物(TMDs)的多态性以及这些多晶型物的不同电子特性,使得TMDs在电子应用领域成为特别有前景的材料。最近,二维MoS₂中从半导体三角棱柱形H相到金属八面体T相的局部转变已通过电子辐照诱导实现[《自然·纳米技术》,2014年,第9卷,第391页],但转变的机制仍然难以捉摸。利用密度泛函理论计算,我们研究了存在额外电荷、机械应变和空位时二维MoS₂稳定相和亚稳相的能量学。我们还研究了有限温度的作用,其似乎对转变至关重要。基于我们的计算结果,我们对束流诱导的转变提出了一种解释,这种转变可能是由于电子激发导致单层中的电荷重新分布,再加上电子束下空位的形成以及样品中相关机械应变的积累而促进的。由于这种机制应该与其他二维TMDs相关,我们的结果为进一步开发和优化具有亚纳米分辨率的二维TMDs原子结构和电子特性的电子束介导工程提供了线索。

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