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二硫化钼/石墨烯异质结构电学性质与力学变形的原位透射电子显微镜研究

In Situ TEM Study of Electrical Property and Mechanical Deformation in MoS/Graphene Heterostructures.

作者信息

Giri Suresh, Sharma Subash, Mahyavanshi Rakesh D, Kalita Golap, Yang Yong, Tanemura Masaki

机构信息

Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.

School of Chemistry, University of Bristol, Cantock's Cl, Bristol BS8 1TS, UK.

出版信息

Nanomaterials (Basel). 2025 Jan 14;15(2):114. doi: 10.3390/nano15020114.

Abstract

We present a versatile method for synthesizing high-quality molybdenum disulfide (MoS) crystals on graphite foil edges via chemical vapor deposition (CVD). This results in MoS/graphene heterostructures with precise epitaxial layers and no rotational misalignment, eliminating the need for transfer processes and reducing contamination. Utilizing in situ transmission electron microscopy (TEM) equipped with a nano-manipulator and tungsten probe, we mechanically induce the folding, wrinkling, and tearing of freestanding MoS crystals, enabling the real-time observation of structural changes at high temporal and spatial resolutions. By applying a bias voltage through the probe, we measure the electrical properties under mechanical stress, revealing near-ohmic behavior due to compatible work functions. This approach facilitates the real-time study of mechanical and electrical properties of MoS crystals and can be extended to other two-dimensional materials, thereby advancing applications in flexible and bendable electronics.

摘要

我们展示了一种通过化学气相沉积(CVD)在石墨箔边缘合成高质量二硫化钼(MoS)晶体的通用方法。这产生了具有精确外延层且无旋转错位的MoS/石墨烯异质结构,无需转移过程并减少了污染。利用配备纳米操纵器和钨探针的原位透射电子显微镜(TEM),我们对独立的MoS晶体进行机械诱导折叠、起皱和撕裂,从而能够在高时空分辨率下实时观察结构变化。通过探针施加偏置电压,我们测量了机械应力下的电学性质,揭示了由于功函数兼容而呈现的近欧姆行为。这种方法有助于对MoS晶体的机械和电学性质进行实时研究,并且可以扩展到其他二维材料,从而推动在柔性和可弯曲电子学中的应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc83/11767539/3ddb34b01d34/nanomaterials-15-00114-g001.jpg

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