• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于热电应用的异质结构ZnSb双层/h-BN单层的第一性原理研究

First-Principles Study of the Heterostructure, ZnSb Bilayer/h-BN Monolayer for Thermoelectric Applications.

作者信息

Darhi Zakariae, El Farh Larbi, Pandey Ravindra

机构信息

Department of Physics, Mohamed 1st University, Oujda 60000, Morocco.

Department of Physics, Michigan Technological University, Houghton, MI 49931, USA.

出版信息

Materials (Basel). 2025 Jan 10;18(2):294. doi: 10.3390/ma18020294.

DOI:10.3390/ma18020294
PMID:39859765
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11767080/
Abstract

ZnSb is widely recognized as a promising thermoelectric material in its bulk form, and a ZnSb bilayer was recently synthesized from the bulk. In this study, we designed a vertical van der Waals heterostructure consisting of a ZnSb bilayer and an h-BN monolayer to investigate its electronic, elastic, transport, and thermoelectric properties. Based on density functional theory, the results show that the formation of this heterostructure significantly enhances electron mobility and reduces the bandgap compared to the ZnSb bilayer, thereby increasing its power factor. These findings highlight the potential of the h-BN monolayer-supported ZnSb bilayer heterostructure in thermoelectric applications, where maximizing energy conversion efficiency is essential.

摘要

ZnSb作为一种块状形式的有前景的热电材料已被广泛认可,并且最近从块状材料合成了ZnSb双层。在本研究中,我们设计了一种由ZnSb双层和h-BN单层组成的垂直范德华异质结构,以研究其电子、弹性、输运和热电性质。基于密度泛函理论,结果表明,与ZnSb双层相比,这种异质结构的形成显著提高了电子迁移率并减小了带隙,从而提高了其功率因数。这些发现突出了h-BN单层支撑的ZnSb双层异质结构在热电应用中的潜力,在热电应用中最大化能量转换效率至关重要。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/aa88dbbaaea5/materials-18-00294-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/b90902b79602/materials-18-00294-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/8a7a80c1600e/materials-18-00294-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/c66b2dc93676/materials-18-00294-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/2f316f5b00a3/materials-18-00294-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/baff7f542183/materials-18-00294-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/aa88dbbaaea5/materials-18-00294-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/b90902b79602/materials-18-00294-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/8a7a80c1600e/materials-18-00294-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/c66b2dc93676/materials-18-00294-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/2f316f5b00a3/materials-18-00294-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/baff7f542183/materials-18-00294-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/93c7/11767080/aa88dbbaaea5/materials-18-00294-g006.jpg

相似文献

1
First-Principles Study of the Heterostructure, ZnSb Bilayer/h-BN Monolayer for Thermoelectric Applications.用于热电应用的异质结构ZnSb双层/h-BN单层的第一性原理研究
Materials (Basel). 2025 Jan 10;18(2):294. doi: 10.3390/ma18020294.
2
First-principles investigations on a two-dimensional SN/black phosphorene van der Waals heterostructure: mechanical, carrier transport and thermoelectric anisotropy.二维SN/黑磷范德华异质结构的第一性原理研究:力学、载流子输运和热电各向异性
J Phys Condens Matter. 2021 Aug 10;33(42). doi: 10.1088/1361-648X/ac1824.
3
Exceptional Thermoelectric Properties of Bilayer GeSe: First Principles Calculation.双层GeSe的优异热电性能:第一性原理计算
Materials (Basel). 2022 Jan 27;15(3):971. doi: 10.3390/ma15030971.
4
Enhanced carrier mobility and tunable electronic properties in α-tellurene monolayer via an α-tellurene and h-BN heterostructure.通过α-碲烯与h-BN异质结构增强α-碲烯单层中的载流子迁移率和可调电子性质。
Phys Chem Chem Phys. 2020 Mar 18;22(11):6434-6440. doi: 10.1039/d0cp00269k.
5
Determination of optimum optoelectronic properties in vertically stacked MoS/h-BN/WSe van der Waals heterostructures.确定垂直堆叠 MoS/h-BN/WSe 范德华异质结构中的最佳光电性能。
Phys Chem Chem Phys. 2019 Oct 24;21(41):23179-23186. doi: 10.1039/c9cp04700j.
6
Thermoelectric properties of XX- and XY-stacked GeS/GeSe van der Waals heterostructures from DFT and BTP calculations.基于密度泛函理论(DFT)和贝里曲率偶极矩(BTP)计算的XX和XY堆叠GeS/GeSe范德华异质结构的热电性质
Sci Rep. 2024 Nov 5;14(1):26844. doi: 10.1038/s41598-024-78250-4.
7
Stable CN/-BN van der Waals heterostructure: flexibly tunable electronic and optic properties.稳定的氮化碳/氮化硼范德华异质结构:可灵活调节的电子和光学特性
J Phys Condens Matter. 2020 Aug 27;32(47). doi: 10.1088/1361-648X/abaf12.
8
First-Principles Study of a MoS-PbS van der Waals Heterostructure Inspired by Naturally Occurring Merelaniite.受天然存在的硫铜铅矿启发的MoS-PbS范德华异质结构的第一性原理研究
Materials (Basel). 2021 Mar 27;14(7):1649. doi: 10.3390/ma14071649.
9
High Carrier Mobility and Controllable Electronic Property of the h-BN/SnSe Heterostructure.h-BN/SnSe异质结构的高载流子迁移率和可控电子性质
Langmuir. 2023 Aug 8;39(31):10769-10778. doi: 10.1021/acs.langmuir.3c00625. Epub 2023 Jul 25.
10
Excellent thermoelectric performance induced by interface effect in MoS/MoSe van der Waals heterostructure.界面效应在MoS/MoSe范德华异质结构中诱导出优异的热电性能。
J Phys Condens Matter. 2020 Jan 30;32(5):055302. doi: 10.1088/1361-648X/ab4cab. Epub 2019 Oct 10.

本文引用的文献

1
High-Throughput Computational Screening of Two-Dimensional Semiconductors.高通量二维半导体的计算筛选。
J Phys Chem Lett. 2022 Dec 22;13(50):11581-11594. doi: 10.1021/acs.jpclett.2c02972. Epub 2022 Dec 8.
2
Ultrahigh anisotropic carrier mobility in ZnSb monolayers functionalized with halogen atoms.卤原子功能化的ZnSb单层中的超高各向异性载流子迁移率。
RSC Adv. 2022 Sep 22;12(41):26994-27001. doi: 10.1039/d2ra04782a. eCollection 2022 Sep 16.
3
High-Performance and Stable (Ag, Cd)-Containing ZnSb Thermoelectric Compounds.
高性能且稳定的含(银、镉)的ZnSb热电化合物
ACS Appl Mater Interfaces. 2022 Jun 15;14(23):26662-26670. doi: 10.1021/acsami.2c03304. Epub 2022 Jun 1.
4
Direct band gap and anisotropic transport of ZnSb monolayers tuned by hydrogenation and strain.通过氢化和应变调控的ZnSb单层的直接带隙和各向异性输运
RSC Adv. 2022 Jan 20;12(5):2693-2700. doi: 10.1039/d1ra08619g. eCollection 2022 Jan 18.
5
Emerging beyond-graphene elemental 2D materials for energy and catalysis applications.用于能源和催化应用的新兴非石墨烯二维元素材料。
Chem Soc Rev. 2021 Oct 4;50(19):10983-11031. doi: 10.1039/c9cs00821g.
6
Interfacial hybridization of Janus MoSSe and BX (X = P, As) monolayers for ultrathin excitonic solar cells, nanopiezotronics and low-power memory devices.用于超薄激子太阳能电池、纳米压电电子学和低功耗存储器件的Janus MoSSe与BX(X = P,As)单层的界面杂交。
Nanoscale. 2020 Nov 28;12(44):22645-22657. doi: 10.1039/d0nr07000a. Epub 2020 Nov 6.
7
Creation of two-dimensional layered Zintl phase by dimensional manipulation of crystal structure.通过晶体结构的维度操控创建二维层状津特耳相。
Sci Adv. 2019 Jun 28;5(6):eaax0390. doi: 10.1126/sciadv.aax0390. eCollection 2019 Jun.
8
Synthesis of MoS and MoO for their applications in H generation and lithium ion batteries: a review.用于氢气生成和锂离子电池的二硫化钼和三氧化钼的合成:综述
Sci Technol Adv Mater. 2013 Jul 23;14(4):043501. doi: 10.1088/1468-6996/14/4/043501. eCollection 2013 Aug.
9
High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films.夹在化学气相沉积生长的六方氮化硼薄膜之间的高迁移率且空气稳定的单层二硫化钨场效应晶体管。
Sci Rep. 2015 Jun 1;5:10699. doi: 10.1038/srep10699.
10
Sensing behavior of atomically thin-layered MoS2 transistors.原子层状 MoS2 晶体管的传感行为。
ACS Nano. 2013 Jun 25;7(6):4879-91. doi: 10.1021/nn400026u. Epub 2013 Jun 3.