Peng Yawen, He Ren, Li Peng, Zhdanovich Sergey, Michiardi Matteo, Gorovikov Sergey, Zonno Marta, Damascelli Andrea, Miao Guo-Xing
Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, N2L3G1, Canada.
Quantum Matter Institute, University of British Columbia, Vancouver, BC, V6T 1Z4, Canada.
Small. 2025 Feb;21(8):e2409535. doi: 10.1002/smll.202409535. Epub 2025 Jan 26.
Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated lattices, or by generating heavy band folding with avoided band crossing in Moiré superlattices. Here a general approach is proposed to introduce flat bands into widely studied transition metal dichalcogenide (TMD) materials by dilute intercalation. A flat band with vanishing dispersion is observed by angle-resolved photoemission spectroscopy (ARPES) over the entire momentum space in intercalated MnTaS. Polarization-dependent ARPES measurements combined with symmetry analysis reveal the orbital characters of the flat band. Supercell tight-binding simulations suggest that such flat bands arising from destructive interference between Mn and Ta on S through hopping pathways, are ubiquitous in a range of TMD families as well as for different intercalation configurations. The findings establish a new material platform to manipulate flat band structures and explore their corresponding emergent correlated properties.
通过抑制电子动能并增强多体关联，电子平带可导致丰富的多体量子相。带宽的减小可以通过在受挫晶格中产生破坏性量子干涉来实现，或者通过在莫尔超晶格中产生具有避免能带交叉的重能带折叠来实现。本文提出了一种通过稀插层将平带引入广泛研究的过渡金属二硫属化物（TMD）材料的通用方法。通过角分辨光电子能谱（ARPES）在插层的MnTaS的整个动量空间中观察到具有零色散的平带。偏振相关的ARPES测量结合对称性分析揭示了平带的轨道特征。超胞紧束缚模拟表明，通过跳跃路径在S上Mn和Ta之间的破坏性干涉产生的这种平带，在一系列TMD家族以及不同的插层构型中普遍存在。这些发现建立了一个新的材料平台，用于操纵平带结构并探索其相应的涌现关联特性。
