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二氧化钒(VO₂)中的超快电荷载流子动力学:对光致相变的非平衡贡献

Ultrafast Charge Carrier Dynamics in Vanadium Dioxide, VO: Nonequilibrium Contributions to the Photoinduced Phase Transitions.

作者信息

Tomko John A, Aryana Kiumars, Wu Yifan, Zhou Guoqing, Zhang Qiyan, Wongwiset Pat, Wheeler Virginia, Prezhdo Oleg V, Hopkins Patrick E

机构信息

Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.

Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States.

出版信息

J Phys Chem Lett. 2025 Feb 6;16(5):1312-1319. doi: 10.1021/acs.jpclett.4c02951. Epub 2025 Jan 28.

DOI:10.1021/acs.jpclett.4c02951
PMID:39873343
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11808786/
Abstract

Vanadium oxide (VO) is an exotic phase-change material with diverse applications ranging from thermochromic smart windows to thermal sensors, neuromorphic computing, and tunable metasurfaces. Nonetheless, the mechanism responsible for its metal-insulator phase transition remains a subject of vigorous debate. Here, we investigate the ultrafast dynamics of the photoinduced phase transition in VO under low perturbation conditions. By experimentally examining carrier relaxation dynamics at energy levels near the VO band gap (0.6-0.92 eV), we note that numerous optical features do not correspond to the first-order phase transition. Previous studies indeed induced such a phase transition, but they relied on fluences at least an order of magnitude higher, leading to temperature increases well above the transition threshold (340 K). Instead, for excitation fluences that correspond to lattice temperatures only in slight excess of the phase transition (absolute temperatures < 500 K), we find that the marked changes in optical properties are dominated by a shift in the electronic density of states/Fermi level. We find that this effect is a lattice-driven process and does not occur until sufficient energy has been transferred from the excited electrons into the phonon subsystem.

摘要

氧化钒(VO)是一种具有多种应用的奇特相变材料,其应用范围涵盖从热致变色智能窗户到热传感器、神经形态计算和可调谐超表面等领域。尽管如此,其金属 - 绝缘体相变的机制仍是激烈争论的主题。在此,我们研究了低扰动条件下VO中光致相变的超快动力学。通过实验研究VO带隙(0.6 - 0.92 eV)附近能级的载流子弛豫动力学,我们注意到许多光学特征并不对应于一级相变。先前的研究确实诱导了这种相变,但它们依赖的光通量至少高一个数量级,导致温度升高远高于转变阈值(340 K)。相反,对于仅对应于略高于相变的晶格温度(绝对温度 < 500 K)的激发光通量,我们发现光学性质的显著变化主要由态密度/费米能级的移动主导。我们发现这种效应是一个晶格驱动的过程,并且直到足够的能量从激发电子转移到声子子系统中才会发生。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8897/11808786/1879e719fcc2/jz4c02951_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8897/11808786/12292f8b4451/jz4c02951_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8897/11808786/6718dc50845b/jz4c02951_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8897/11808786/1879e719fcc2/jz4c02951_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8897/11808786/12292f8b4451/jz4c02951_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8897/11808786/6718dc50845b/jz4c02951_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8897/11808786/1879e719fcc2/jz4c02951_0003.jpg

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本文引用的文献

1
Inhomogeneous Photosusceptibility of VO_{2} Films at the Nanoscale.纳米尺度下VO₂薄膜的非均匀光敏感性
Phys Rev Lett. 2024 May 3;132(18):186903. doi: 10.1103/PhysRevLett.132.186903.
2
Following the Nonthermal Phase Transition in Niobium Dioxide by Time-Resolved Harmonic Spectroscopy.通过时间分辨谐波光谱法研究二氧化铌中的非热相变
Phys Rev Lett. 2023 Dec 15;131(24):243201. doi: 10.1103/PhysRevLett.131.243201.
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Unifying the order and disorder dynamics in photoexcited VO.统一光激发VO中的有序和无序动力学。
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Long-lived modulation of plasmonic absorption by ballistic thermal injection.通过弹道热注入实现的等离子体吸收的长期调制。
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Thin Ti adhesion layer breaks bottleneck to hot hole relaxation in Au films.超薄钛粘附层突破了金薄膜中热空穴弛豫的瓶颈。
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Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications.二氧化钒:多刺激响应材料及其应用
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Proc Natl Acad Sci U S A. 2017 Sep 5;114(36):9558-9563. doi: 10.1073/pnas.1707602114. Epub 2017 Aug 21.
9
Sharpened VO Phase Transition via Controlled Release of Epitaxial Strain.通过控制外延应变释放实现尖锐的 VO 相转变。
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