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深入了解多孔单晶氧化物中氧空位在增强催化活性和耐久性方面的作用及证据。

Insight into the Role and Evidence of Oxygen Vacancies in Porous Single-Crystalline Oxide to Enhance Catalytic Activity and Durability.

作者信息

Ye Lingting, Ma Jiaming, Zhang Jie, Yin Wen, Xia Yuanguang, Xie Kui

机构信息

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China.

出版信息

Research (Wash D C). 2023 Sep 21;6:0233. doi: 10.34133/research.0233. eCollection 2023.

Abstract

Introducing and stabilizing oxygen vacancies in oxide catalysts is considered to be a promising strategy for improving catalytic activity and durability. Herein, we quantitatively create oxygen vacancies in the lattice of porous single-crystalline β-GaO monoliths by reduction treatments and stabilize them through the long-range ordering of crystal lattice to enhance catalytic activity and durability. The combination analysis of time-of-flight neutron powder diffraction and extended x-ray absorption fine structure discloses that the preferential generation of oxygen vacancy tends to occur at the site of tetrahedral coordination oxygen ions (O sites), which contributes to the formation of unsaturated Ga-O coordination in the monoclinic phase. The oxygen vacancies are randomly distributed in lattice even though some of them are present in the form of domain defect in the PSC GaO monoliths after the reduction treatment. The number of oxygen vacancies in the reduced monoliths gives 2.32 × 10, 2.87 × 10, and 3.45 × 10 mg for the GaO, GaO, and GaO, respectively. We therefore demonstrate the exceptionally high CH selectivity of ~100% at the CH conversion of ~37% for nonoxidative dehydrogenation of CH to CH. We further demonstrate the excellent durability even at 620 °C for 240 h of continuous operation.

摘要

在氧化物催化剂中引入并稳定氧空位被认为是提高催化活性和耐久性的一种有前景的策略。在此,我们通过还原处理在多孔单晶β-GaO整体材料的晶格中定量地产生氧空位,并通过晶格的长程有序排列使其稳定,以提高催化活性和耐久性。飞行时间中子粉末衍射和扩展X射线吸收精细结构的联合分析表明,氧空位倾向于优先在四面体配位氧离子(O位点)处产生,这有助于在单斜相中形成不饱和的Ga-O配位。尽管在还原处理后的PSC GaO整体材料中,一些氧空位以畴缺陷的形式存在,但它们在晶格中是随机分布的。对于GaO、GaO和GaO,还原后的整体材料中的氧空位数量分别为2.32×10、2.87×10和3.45×10毫克。因此,我们证明了在将CH非氧化脱氢为CH的过程中,在CH转化率约为37%时,CH选择性异常高,约为100%。我们还证明了即使在620℃连续运行240小时,其耐久性也非常出色。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5cde/11776074/9c20e74986fe/research.0233.fig.001.jpg

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