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原位监测手性磁体中拓扑转变的磁输运特征

In-Situ Monitoring the Magnetotransport Signature of Topological Transitions in a Chiral Magnet.

作者信息

Thomas Andy, Pohl Darius, Tahn Alexander, Schlörb Heike, Schneider Sebastian, Kriegner Dominik, Beckert Sebastian, Vir Praveen, Winter Moritz, Felser Claudia, Rellinghaus Bernd

机构信息

Institute for Solid State and Materials Physics, TUD University of Technology Dresden, 01069, Dresden, Germany.

Leibniz Institute for Solid State and Materials Research Dresden, 01069, Dresden, Germany.

出版信息

Small Methods. 2025 Jul;9(7):e2401875. doi: 10.1002/smtd.202401875. Epub 2025 Feb 12.

Abstract

Emerging magnetic fields related to the presence of topologically protected spin textures such as skyrmions are expected to give rise to additional, topology-related contributions to the Hall effect. In order to doubtlessly identify this so-called topological Hall effect, it is crucial to disentangle such contributions from the anomalous Hall effect. This necessitates a direct correlation of the transversal Hall voltage with the underlying magnetic textures. A novel measurement platform is developed that allows to acquire high-resolution Lorentz transmission electron microscopy images of magnetic textures as a function of an external magnetic field and to concurrently measure the (anomalous) Hall voltage in-situ in the microscope on one and the same specimen. This approach is used to investigate the transport signatures of the chiral soliton lattice and antiskyrmions in MnPtSn. Notably, the observed textures allow to fully understand the measured Hall voltage without the need of any additional contributions due to a topological Hall effect, and the field-controlled formation and annihilation of anstiskyrmions are found to have no effect on the measured Hall voltage.

摘要

与诸如斯格明子等拓扑保护自旋纹理的存在相关的新兴磁场,预计会对霍尔效应产生额外的、与拓扑相关的贡献。为了毫无疑问地识别这种所谓的拓扑霍尔效应,将这些贡献与反常霍尔效应区分开来至关重要。这就需要横向霍尔电压与潜在磁纹理之间存在直接关联。开发了一种新型测量平台,该平台能够获取作为外部磁场函数的磁纹理的高分辨率洛伦兹透射电子显微镜图像,并能在显微镜内对同一试样同时原位测量(反常)霍尔电压。这种方法用于研究MnPtSn中手性孤子晶格和反斯格明子的输运特征。值得注意的是,观察到的纹理使得无需拓扑霍尔效应的任何额外贡献就能完全理解所测量的霍尔电压,并且发现反斯格明子的场控形成和湮灭对所测量的霍尔电压没有影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4728/12285621/aa1a907a0e76/SMTD-9-2401875-g003.jpg

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