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二硒化钛器件中的钛自嵌入:原位透射电子显微镜的见解

Titanium Self-Intercalation in Titanium Diselenide Devices: Insights from In Situ Transmission Electron Microscopy.

作者信息

Sung Hsin-Ya, Wang Che-Hung, Lee Mu-Pai, Lin Yu-Chuan, Lin Yen-Fu, Huang Chun-Wei, Wu Wen-Wei

机构信息

Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.

Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.

出版信息

Adv Mater. 2025 Apr;37(17):e2418557. doi: 10.1002/adma.202418557. Epub 2025 Mar 4.

Abstract

Metallic transition metal dichalcogenides (MTMDCs) are of significant attention for various electronic applications due to their anisotropic conductivity, high electron mobility, superconductivity, and charge-density-waves (CDW). Understanding the correlations between electronic properties and structural transformations is crucial. In this study, a bias-induced structural transformation in vertical CDW-based 1T-TiSe devices, transitioning from a 1T metallic phase to a distorted transition 1T phase and subsequently to an orthorhombic TiSe conducting phase, is reported. Using ex-situ and in-situ biasing transmission electron microscopy, dynamic structural changes, while electron energy loss spectroscopy analysis revealed valence state modifications in Ti and Se within the Ti-rich layer after biasing, are observed. In addition, the effect of varying 1T-TiSe thickness on the maximum current value is investigated. These observations reveal that increased thickness requires higher voltage to induce phase transitions. These insights contribute to understanding the structural and electronic dynamics of 1T-TiSe, highlighting its potential as a promising material for future CDW-based device applications.

摘要

金属过渡金属二硫属化物(MTMDCs)因其各向异性导电性、高电子迁移率、超导性和电荷密度波(CDW)而在各种电子应用中备受关注。了解电子特性与结构转变之间的相关性至关重要。在本研究中,报道了基于垂直CDW的1T-TiSe器件中偏压诱导的结构转变,该转变从1T金属相转变为扭曲的过渡1T相,随后转变为正交TiSe导电相。使用非原位和原位偏压透射电子显微镜,观察到动态结构变化,同时电子能量损失谱分析显示偏压后富Ti层内Ti和Se的价态发生了改变。此外,研究了改变1T-TiSe厚度对最大电流值的影响。这些观察结果表明,增加厚度需要更高的电压来诱导相变。这些见解有助于理解1T-TiSe的结构和电子动力学,突出了其作为未来基于CDW的器件应用的有前途材料的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0497/12038540/0d1b34ed3f02/ADMA-37-2418557-g001.jpg

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