Haghighi Pegah, Jeakle Eleanor N, Sturgill Brandon S, Abbott Justin R, Solis Elysandra, Devata Veda S, Vijayakumar Gayathri, Hernandez-Reynoso Ana G, Cogan Stuart F, Pancrazio Joseph J
Department of Bioengineering, The University of Texas at Dallas, Richardson, TX 75080, USA.
Department of Chemistry and Biochemistry, The University of Texas at Dallas, Richardson, TX 75080, USA.
Micromachines (Basel). 2025 Jan 21;16(2):113. doi: 10.3390/mi16020113.
Implantable microelectrode arrays (MEAs) enable the recording of electrical activity from cortical neurons for applications that include brain-machine interfaces. However, MEAs show reduced recording capabilities under chronic implantation conditions. This has largely been attributed to the brain's foreign body response, which is marked by neuroinflammation and gliosis in the immediate vicinity of the MEA implantation site. This has prompted the development of novel MEAs with either coatings or architectures that aim to reduce the tissue response. The present study examines the comparative performance of multi-shank planar, silicon-based devices and low-flexural-rigidity amorphous silicon carbide (a-SiC) MEAs that have a similar architecture but differ with respect to the shank cross-sectional area. Data from a-SiC arrays were previously reported in a prior study from our group. In a manner consistent with the prior work, larger cross-sectional area silicon-based arrays were implanted in the motor cortex of female Sprague-Dawley rats and weekly recordings were made for 16 weeks after implantation. Single unit metrics from the recordings were compared over the implantation period between the device types. Overall, the expression of single units measured from a-SiC devices was significantly higher than for silicon-based MEAs throughout the implantation period. Immunohistochemical analysis demonstrated reduced neuroinflammation and gliosis around the a-SiC MEAs compared to silicon-based devices. Our findings demonstrate that the a-SiC MEAs with a smaller shank cross-sectional area can record single unit activity with more stability and exhibit a reduced inflammatory response compared to the silicon-based device employed in this study.
可植入微电极阵列(MEA)能够记录皮层神经元的电活动,用于包括脑机接口在内的各种应用。然而,在长期植入条件下,MEA的记录能力会下降。这在很大程度上归因于大脑的异物反应,其特征是MEA植入部位附近出现神经炎症和胶质增生。这促使人们开发具有涂层或结构的新型MEA,旨在减少组织反应。本研究考察了具有相似结构但柄部横截面积不同的多柄平面硅基器件和低弯曲刚度非晶碳化硅(a-SiC)MEA的比较性能。a-SiC阵列的数据先前已在我们小组的一项前期研究中报道。按照与先前工作一致的方式,将较大横截面积的硅基阵列植入雌性Sprague-Dawley大鼠的运动皮层,并在植入后每周进行记录,持续16周。在植入期间,比较了不同类型器件记录的单个单元指标。总体而言,在整个植入期间,从a-SiC器件测量的单个单元表达明显高于硅基MEA。免疫组织化学分析表明,与硅基器件相比,a-SiC MEA周围的神经炎症和胶质增生减少。我们的研究结果表明,与本研究中使用的硅基器件相比,具有较小柄部横截面积的a-SiC MEA能够更稳定地记录单个单元活动,并表现出减少的炎症反应。