• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于神经形态计算中提高功率效率的新型溶液法制备的FeO/WS混合纳米复合动态忆阻器

Novel Solution-Processed FeO/WS Hybrid Nanocomposite Dynamic Memristor for Advanced Power Efficiency in Neuromorphic Computing.

作者信息

Ghafoor Faisal, Kim Honggyun, Ghafoor Bilal, Ahmed Zaheer, Khan Muhammad Farooq, Rabeel Muhammad, Maqsood Muhammad Faheem, Nasir Sobia, Zulfiqar Wajid, Dastageer Ghulam, Lee Myoung-Jae, Kim Deok-Kee

机构信息

Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul, 05006, Republic of Korea.

Department of Semiconductor Systems Engineering, Sejong University, Seoul, 05006, Republic of Korea.

出版信息

Adv Sci (Weinh). 2025 May;12(17):e2408133. doi: 10.1002/advs.202408133. Epub 2025 Mar 9.

DOI:10.1002/advs.202408133
PMID:40059313
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12061252/
Abstract

Non-volatile memory (NVM) based neuromorphic computing, which is inspired by the human brain, is a compelling paradigm in regard to building energy-efficient computing hardware that is tailored for artificial intelligence. However, the current state of the art NVMs are facing challenges with low operating voltages, energy efficiencies, and high densities in order to meet the new computing system beyond Moore's law. It is therefore necessary to develop novel hybrid materials with controlled compositional dynamics is crucial for initiating memristor devices capable of low-power operations. This study validates the effectiveness of Ag/FeW/Pt hybrid nanocomposite memristor devices, demonstrating superior performance including ultra-low voltage operation, high stability, reproducibility, exceptional endurance (10 cycles), environmental resilience, and low energy consumption of 0.072 pJ. Moreover, the memristor exhibits the ability to emulate essential biological synaptic mechanisms. The resistive switching phenomenon is primarily attributed to the controlled filament formation along unique heterophase grain boundaries. Furthermore, the hybrid nanocomposite synaptic device achieved an image recognition accuracy of 94.3% in Artificial Neural Network (ANN) simulations by using the Modified National Institute of Standards and Technology (MNIST) dataset. These results imply that the device's performance has promising implications for facilitating efficient neuromorphic architectures in the future.

摘要

受人类大脑启发的基于非易失性存储器(NVM)的神经形态计算,是构建适用于人工智能的节能计算硬件的一种引人注目的范式。然而,当前最先进的非易失性存储器在低工作电压、能量效率和高密度方面面临挑战,以满足超越摩尔定律的新计算系统的需求。因此,开发具有可控成分动力学的新型混合材料对于启动能够进行低功耗操作的忆阻器器件至关重要。本研究验证了Ag/FeW/Pt混合纳米复合忆阻器器件的有效性,展示了其卓越的性能,包括超低压操作、高稳定性、可重复性、出色的耐久性(10个循环)、环境适应性以及0.072 pJ的低能耗。此外,该忆阻器表现出模拟基本生物突触机制的能力。电阻开关现象主要归因于沿着独特异相晶界形成的可控细丝。此外,通过使用改进的美国国家标准与技术研究院(MNIST)数据集,混合纳米复合突触器件在人工神经网络(ANN)模拟中实现了94.3%的图像识别准确率。这些结果表明,该器件的性能对于未来推动高效神经形态架构具有广阔前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/2b127c793435/ADVS-12-2408133-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/5e4b9efa9a37/ADVS-12-2408133-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/90026238628c/ADVS-12-2408133-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/4a447b916420/ADVS-12-2408133-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/e8425eac9b8d/ADVS-12-2408133-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/2b127c793435/ADVS-12-2408133-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/5e4b9efa9a37/ADVS-12-2408133-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/90026238628c/ADVS-12-2408133-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/4a447b916420/ADVS-12-2408133-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/e8425eac9b8d/ADVS-12-2408133-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f282/12061252/2b127c793435/ADVS-12-2408133-g002.jpg

相似文献

1
Novel Solution-Processed FeO/WS Hybrid Nanocomposite Dynamic Memristor for Advanced Power Efficiency in Neuromorphic Computing.用于神经形态计算中提高功率效率的新型溶液法制备的FeO/WS混合纳米复合动态忆阻器
Adv Sci (Weinh). 2025 May;12(17):e2408133. doi: 10.1002/advs.202408133. Epub 2025 Mar 9.
2
Interface engineering in ZnO/CdO hybrid nanocomposites to enhanced resistive switching memory for neuromorphic computing.ZnO/CdO混合纳米复合材料中的界面工程用于增强神经形态计算的电阻式开关存储器。
J Colloid Interface Sci. 2024 Apr;659:1-10. doi: 10.1016/j.jcis.2023.12.084. Epub 2023 Dec 21.
3
Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network.用于人工神经网络的突触模拟硬件实现的电阻式随机存取存储器。
Sensors (Basel). 2023 Mar 14;23(6):3118. doi: 10.3390/s23063118.
4
Robust Ag/ZrO/WS/Pt Memristor for Neuromorphic Computing.用于神经形态计算的鲁棒 Ag/ZrO/WS/Pt 忆阻器。
ACS Appl Mater Interfaces. 2019 Dec 26;11(51):48029-48038. doi: 10.1021/acsami.9b17160. Epub 2019 Dec 13.
5
Organic Memristor with Synaptic Plasticity for Neuromorphic Computing Applications.具有突触可塑性的有机忆阻器用于神经形态计算应用。
Nanomaterials (Basel). 2023 Feb 22;13(5):803. doi: 10.3390/nano13050803.
6
Dynamic FeO/FeWO nanocomposite memristor for neuromorphic and reservoir computing.用于神经形态和储层计算的动态FeO/FeWO纳米复合忆阻器
Nanoscale. 2024 Dec 19;17(1):361-377. doi: 10.1039/d4nr03762f.
7
Sputtering-deposited amorphous SrVO-based memristor for use in neuromorphic computing.溅射沉积非晶态 SrVO 基忆阻器在神经形态计算中的应用。
Sci Rep. 2020 Apr 1;10(1):5761. doi: 10.1038/s41598-020-62642-3.
8
Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence.用于人工智能硬件实现的混合氧化物类脑神经形态器件
Sci Technol Adv Mater. 2021 May 14;22(1):326-344. doi: 10.1080/14686996.2021.1911277.
9
GeTe/MoTe Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications.碲化锗/碲化钼范德华异质结构:用于非易失性存储器和神经形态计算应用的超低电压忆阻器
Small. 2024 Oct;20(42):e2400791. doi: 10.1002/smll.202400791. Epub 2024 Jun 14.
10
Control-Etched TiCT MXene Nanosheets for a Low-Voltage-Operating Flexible Memristor for Efficient Neuromorphic Computation.用于高效神经形态计算的低电压操作柔性忆阻器的可控蚀刻TiCT MXene纳米片
ACS Appl Mater Interfaces. 2024 Apr 10;16(14):17821-17831. doi: 10.1021/acsami.4c01364. Epub 2024 Mar 27.

本文引用的文献

1
Versatile Titanium Carbide MXene Thin-Film Memristors with Adaptive Learning Behavior.具有自适应学习行为的多功能碳化钛MXene薄膜忆阻器
ACS Appl Mater Interfaces. 2024 Apr 9. doi: 10.1021/acsami.3c19177.
2
Ultra-fast switching memristors based on two-dimensional materials.基于二维材料的超快速开关忆阻器
Nat Commun. 2024 Mar 14;15(1):2334. doi: 10.1038/s41467-024-46372-y.
3
Controllable Resistive Switching in ReS /WS Heterostructure for Nonvolatile Memory and Synaptic Simulation.用于非易失性存储器和突触模拟的 ReS /WS 异质结构中的可控电阻开关
Adv Sci (Weinh). 2023 Oct;10(28):e2302813. doi: 10.1002/advs.202302813. Epub 2023 Aug 2.
4
Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS.通过对原子级薄的WS进行质子辐照增强激子到三重子的转换
Nano Lett. 2023 May 10;23(9):3754-3761. doi: 10.1021/acs.nanolett.2c04987. Epub 2023 Apr 24.
5
Thousands of conductance levels in memristors integrated on CMOS.在 CMOS 上集成的数千个电导水平的忆阻器。
Nature. 2023 Mar;615(7954):823-829. doi: 10.1038/s41586-023-05759-5. Epub 2023 Mar 29.
6
-FeO-based artificial synaptic RRAM device for pattern recognition using artificial neural networks.用于使用人工神经网络进行模式识别的基于FeO的人工突触RRAM器件。
Nanotechnology. 2023 Apr 12;34(26). doi: 10.1088/1361-6528/acc811.
7
Highly light-tunable memristors in solution-processed 2D materials/metal composites.溶液处理的二维材料/金属复合材料中的高光可调忆阻器
Sci Rep. 2022 Nov 5;12(1):18771. doi: 10.1038/s41598-022-23404-5.
8
Interface-Modulated Resistive Switching in Mo-Irradiated ReS for Neuromorphic Computing.用于神经形态计算的钼辐照二硫化铼中的界面调制电阻开关
Adv Mater. 2022 Jul;34(30):e2202722. doi: 10.1002/adma.202202722. Epub 2022 Jun 17.
9
Resistive switching effect and magnetic properties of iron oxide nanoparticles embedded-polyvinyl alcohol film.嵌入聚乙烯醇薄膜的氧化铁纳米颗粒的电阻开关效应和磁性能
RSC Adv. 2020 Mar 31;10(22):12900-12907. doi: 10.1039/c9ra10101b. eCollection 2020 Mar 30.
10
In-Memory Computing using Memristor Arrays with Ultrathin 2D PdSeO /PdSe Heterostructure.使用具有超薄二维PdSeO / PdSe异质结构的忆阻器阵列进行内存计算。
Adv Mater. 2022 Jul;34(26):e2201488. doi: 10.1002/adma.202201488. Epub 2022 May 6.